Propagating Plasmons in a Charge-Neutral Quantum Tunneling Transistor

Achim Woessner, Abhishek Misra, Yang Cao, Iacopo Torre, Artem Mishchenko, Mark B. Lundeberg, Kenji Watanabe, Takashi Taniguchi, Marco Polini, Kostya S. Novoselov, Frank H.L. Koppens*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The ultimate limit of control of light at the nanoscale is the atomic scale. By stacking multiple layers of graphene on hexagonal boron nitride (h-BN), heterostructures with unique nanophotonic properties can be constructed, where the distance between plasmonic materials can be controlled with atom-scale precision. Here we show how an atomically thick tunable quantum tunnelling device can be used as a building block for quantum plasmonics. The device consists of two layers of graphene separated by 1 nm (three monolayers) of h-BN, and a bias voltage between the layers generates an electron gas coupled to a hole gas. We show that, even though its total charge is zero, this system is capable of supporting propagating graphene plasmons.

    Original languageEnglish
    Pages (from-to)3012-3017
    Number of pages6
    JournalACS Photonics
    Volume4
    Issue number12
    Early online date30 Oct 2017
    DOIs
    Publication statusPublished - 2017

    Keywords

    • graphene plasmons
    • graphene tunneling device
    • highly doped graphene
    • nano-optics
    • s-SNOM

    Research Beacons, Institutes and Platforms

    • National Graphene Institute

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