We report on the properties of high quality epitaxial InP grown by solid source molecular beam epitaxy (MBE) using polycrystalline GaP as a phosphorous source. The as-grown InP was n-type with a background impurity concentration of 1.2 × 1015 cm-3 and mobility of 4500 cm2/Vs at room temperature. Low temperature photoluminescence at 5 K showed free exciton together with donor and acceptor related band-edge emission. These results show that high quality InP can be grown by solid source MBE without the need for high temperature crackers or toxic hydride phosphorous sources.
|Number of pages
|Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
|Pt1 : Number 4 A
|Published - 1 Apr 1996