Properties of high quality InP epilayers grown by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source

Adarsh Sandhu, Mohamed Missous

Research output: Contribution to journalArticlepeer-review

Abstract

We report on the properties of high quality epitaxial InP grown by solid source molecular beam epitaxy (MBE) using polycrystalline GaP as a phosphorous source. The as-grown InP was n-type with a background impurity concentration of 1.2 × 1015 cm-3 and mobility of 4500 cm2/Vs at room temperature. Low temperature photoluminescence at 5 K showed free exciton together with donor and acceptor related band-edge emission. These results show that high quality InP can be grown by solid source MBE without the need for high temperature crackers or toxic hydride phosphorous sources.

Original languageEnglish
Pages (from-to)2108-2109
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number Pt1 : Number 4 A
Publication statusPublished - 1 Apr 1996

Keywords

  • CBE
  • GaP
  • InP
  • MBE
  • MOCVD
  • Phosphorous

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