Properties of high quality InP epilayers grown by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source

Adarsh Sandhu; Mohamed Missous

Properties of high quality InP epilayers grown by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source

Adarsh Sandhu^*, Mohamed Missous

^*Corresponding author for this work

EEE - Academic & Research

Tokai University

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the properties of high quality epitaxial InP grown by solid source molecular beam epitaxy (MBE) using polycrystalline GaP as a phosphorous source. The as-grown InP was n-type with a background impurity concentration of 1.2 × 10¹⁵ cm^-3 and mobility of 4500 cm²/Vs at room temperature. Low temperature photoluminescence at 5 K showed free exciton together with donor and acceptor related band-edge emission. These results show that high quality InP can be grown by solid source MBE without the need for high temperature crackers or toxic hydride phosphorous sources.

Original language	English
Pages (from-to)	2108-2109
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	Pt1 : Number 4 A
Publication status	Published - 1 Apr 1996

Keywords

CBE
GaP
InP
MBE
MOCVD
Phosphorous

Cite this

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title = "Properties of high quality InP epilayers grown by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source",

abstract = "We report on the properties of high quality epitaxial InP grown by solid source molecular beam epitaxy (MBE) using polycrystalline GaP as a phosphorous source. The as-grown InP was n-type with a background impurity concentration of 1.2 × 1015 cm-3 and mobility of 4500 cm2/Vs at room temperature. Low temperature photoluminescence at 5 K showed free exciton together with donor and acceptor related band-edge emission. These results show that high quality InP can be grown by solid source MBE without the need for high temperature crackers or toxic hydride phosphorous sources.",

keywords = "CBE, GaP, InP, MBE, MOCVD, Phosphorous",

author = "Adarsh Sandhu and Mohamed Missous",

year = "1996",

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Properties of high quality InP epilayers grown by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source. / Sandhu, Adarsh; Missous, Mohamed.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. Pt1 : Number 4 A, 01.04.1996, p. 2108-2109.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Properties of high quality InP epilayers grown by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source

AU - Sandhu, Adarsh

AU - Missous, Mohamed

PY - 1996/4/1

Y1 - 1996/4/1

N2 - We report on the properties of high quality epitaxial InP grown by solid source molecular beam epitaxy (MBE) using polycrystalline GaP as a phosphorous source. The as-grown InP was n-type with a background impurity concentration of 1.2 × 1015 cm-3 and mobility of 4500 cm2/Vs at room temperature. Low temperature photoluminescence at 5 K showed free exciton together with donor and acceptor related band-edge emission. These results show that high quality InP can be grown by solid source MBE without the need for high temperature crackers or toxic hydride phosphorous sources.

AB - We report on the properties of high quality epitaxial InP grown by solid source molecular beam epitaxy (MBE) using polycrystalline GaP as a phosphorous source. The as-grown InP was n-type with a background impurity concentration of 1.2 × 1015 cm-3 and mobility of 4500 cm2/Vs at room temperature. Low temperature photoluminescence at 5 K showed free exciton together with donor and acceptor related band-edge emission. These results show that high quality InP can be grown by solid source MBE without the need for high temperature crackers or toxic hydride phosphorous sources.

KW - CBE

KW - GaP

KW - InP

KW - MBE

KW - MOCVD

KW - Phosphorous

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - Pt1 : Number 4 A

ER -

Properties of high quality InP epilayers grown by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source

Abstract

Keywords

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