Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r-plane sapphire

T. J. Badcock; R. Hao; M. A. Moram; P. Dawson; M. J. Kappers; C. J. Humphreys

doi:10.1002/pssc.201001043

Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r-plane sapphire

T. J. Badcock, R. Hao, M. A. Moram, P. Dawson, M. J. Kappers, C. J. Humphreys

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated the optical and structural properties of non-polar (11-20) In0.03Ga0.97N/GaN multiple quantum wells (MQWs) grown on r-plane sapphire substrates. The emission spectrum is characterised by a peak at ~370 nm and a blue-green emission band (400-550 nm). The near-UV peak at 370 nm is assigned to carrier recombination in the MQWs lying on the (11-20) plane. On the basis of microscopy and cathodoluminescence imaging, the longer wavelength band is attributed to emission from sidewall MQWs formed on the various semi-polar facets of structural defects which form during MQW growth at the lower temperatures and high NH3 flow in a nitrogen atmosphere. The spectral width of this band is proposed to originate from electronic disorder within individual sidewall QWs and variations between the structural properties of QWs formed on different semi-polar facets. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	2179-2181
Number of pages	2
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	8
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.201001043
Publication status	Published - Jul 2011

Keywords

A-plane
InGaN
QW
Surface pit

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@article{4890510e04944c8abae96d76286f6916,

title = "Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r-plane sapphire",

abstract = "We have investigated the optical and structural properties of non-polar (11-20) In0.03Ga0.97N/GaN multiple quantum wells (MQWs) grown on r-plane sapphire substrates. The emission spectrum is characterised by a peak at ~370 nm and a blue-green emission band (400-550 nm). The near-UV peak at 370 nm is assigned to carrier recombination in the MQWs lying on the (11-20) plane. On the basis of microscopy and cathodoluminescence imaging, the longer wavelength band is attributed to emission from sidewall MQWs formed on the various semi-polar facets of structural defects which form during MQW growth at the lower temperatures and high NH3 flow in a nitrogen atmosphere. The spectral width of this band is proposed to originate from electronic disorder within individual sidewall QWs and variations between the structural properties of QWs formed on different semi-polar facets. {\textcopyright} 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

keywords = "A-plane, InGaN, QW, Surface pit",

author = "Badcock, {T. J.} and R. Hao and Moram, {M. A.} and P. Dawson and Kappers, {M. J.} and Humphreys, {C. J.}",

year = "2011",

month = jul,

doi = "10.1002/pssc.201001043",

language = "English",

volume = "8",

pages = "2179--2181",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "John Wiley & Sons Ltd",

number = "7-8",

}

TY - JOUR

T1 - Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r-plane sapphire

AU - Badcock, T. J.

AU - Hao, R.

AU - Moram, M. A.

AU - Dawson, P.

AU - Kappers, M. J.

AU - Humphreys, C. J.

PY - 2011/7

Y1 - 2011/7

N2 - We have investigated the optical and structural properties of non-polar (11-20) In0.03Ga0.97N/GaN multiple quantum wells (MQWs) grown on r-plane sapphire substrates. The emission spectrum is characterised by a peak at ~370 nm and a blue-green emission band (400-550 nm). The near-UV peak at 370 nm is assigned to carrier recombination in the MQWs lying on the (11-20) plane. On the basis of microscopy and cathodoluminescence imaging, the longer wavelength band is attributed to emission from sidewall MQWs formed on the various semi-polar facets of structural defects which form during MQW growth at the lower temperatures and high NH3 flow in a nitrogen atmosphere. The spectral width of this band is proposed to originate from electronic disorder within individual sidewall QWs and variations between the structural properties of QWs formed on different semi-polar facets. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We have investigated the optical and structural properties of non-polar (11-20) In0.03Ga0.97N/GaN multiple quantum wells (MQWs) grown on r-plane sapphire substrates. The emission spectrum is characterised by a peak at ~370 nm and a blue-green emission band (400-550 nm). The near-UV peak at 370 nm is assigned to carrier recombination in the MQWs lying on the (11-20) plane. On the basis of microscopy and cathodoluminescence imaging, the longer wavelength band is attributed to emission from sidewall MQWs formed on the various semi-polar facets of structural defects which form during MQW growth at the lower temperatures and high NH3 flow in a nitrogen atmosphere. The spectral width of this band is proposed to originate from electronic disorder within individual sidewall QWs and variations between the structural properties of QWs formed on different semi-polar facets. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - A-plane

KW - InGaN

KW - QW

KW - Surface pit

U2 - 10.1002/pssc.201001043

DO - 10.1002/pssc.201001043

M3 - Article

SN - 1862-6351

VL - 8

SP - 2179

EP - 2181

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7-8

ER -

Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r-plane sapphire

Abstract

Keywords

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