Pulsed-laser-deposited, single-crystalline Cu2O films with low resistivity achieved through manipulating the oxygen pressure

Xiaohui Liu; Meng Xu; Xijian Zhang; Weiguang Wang; Xianjin Feng; Aimin Song

doi:10.1016/j.apsusc.2017.11.119

Pulsed-laser-deposited, single-crystalline Cu₂O films with low resistivity achieved through manipulating the oxygen pressure

Xiaohui Liu, Meng Xu, Xijian Zhang, Weiguang Wang, Xianjin Feng^*, Aimin Song

^*Corresponding author for this work

Shandong University

Research output: Contribution to journal › Article › peer-review

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Abstract

Low-resistivity, single-crystalline Cu₂O films were realized on MgO (110) substrates through manipulating the oxygen pressure (P_O2) of pulsed-laser deposition. X-ray diffraction and high resolution transmission electron microscopy measurements revealed that the films deposited at P_O2 of 0.06 and 0.09 Pa were single phase Cu₂O and the 0.09-Pa-deposited film exhibited the best crystallinity with an epitaxial relationship of Cu₂O (110)∥MgO (110) with Cu₂O (001)∥MgO (001). The pure phase Cu₂O films exhibited higher transmittances and larger band gaps with an optical band gap of 2.56 eV obtained for the 0.09 Pa-deposited film. Hall-effect measurements demonstrated that the Cu₂O film deposited at 0.09 Pa had the lowest resistivity of 6.67 Ω cm and highest Hall mobility of 23.75 cm² v⁻¹ s⁻¹.

Original language	English
Pages (from-to)	305-311
Number of pages	7
Journal	Applied Surface Science
Volume	435
Early online date	15 Nov 2017
DOIs	https://doi.org/10.1016/j.apsusc.2017.11.119
Publication status	Published - 30 Mar 2018

Keywords

Copper oxide
Epitaxial
Oxygen pressure
PLD

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10.1016/j.apsusc.2017.11.119

APSUSC-D-17-07664R3Accepted author manuscript, 1.56 MBLicence: CC BY-NC-ND

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title = "Pulsed-laser-deposited, single-crystalline Cu2O films with low resistivity achieved through manipulating the oxygen pressure",

abstract = "Low-resistivity, single-crystalline Cu2O films were realized on MgO (110) substrates through manipulating the oxygen pressure (PO2) of pulsed-laser deposition. X-ray diffraction and high resolution transmission electron microscopy measurements revealed that the films deposited at PO2 of 0.06 and 0.09 Pa were single phase Cu2O and the 0.09-Pa-deposited film exhibited the best crystallinity with an epitaxial relationship of Cu2O (110)∥MgO (110) with Cu2O (001)∥MgO (001). The pure phase Cu2O films exhibited higher transmittances and larger band gaps with an optical band gap of 2.56 eV obtained for the 0.09 Pa-deposited film. Hall-effect measurements demonstrated that the Cu2O film deposited at 0.09 Pa had the lowest resistivity of 6.67 Ω cm and highest Hall mobility of 23.75 cm2 v−1 s−1.",

keywords = "Copper oxide, Epitaxial, Oxygen pressure, PLD",

author = "Xiaohui Liu and Meng Xu and Xijian Zhang and Weiguang Wang and Xianjin Feng and Aimin Song",

year = "2018",

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day = "30",

doi = "10.1016/j.apsusc.2017.11.119",

language = "English",

volume = "435",

pages = "305--311",

journal = "Applied Surface Science",

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T1 - Pulsed-laser-deposited, single-crystalline Cu2O films with low resistivity achieved through manipulating the oxygen pressure

AU - Liu, Xiaohui

AU - Xu, Meng

AU - Zhang, Xijian

AU - Wang, Weiguang

AU - Feng, Xianjin

AU - Song, Aimin

PY - 2018/3/30

Y1 - 2018/3/30

N2 - Low-resistivity, single-crystalline Cu2O films were realized on MgO (110) substrates through manipulating the oxygen pressure (PO2) of pulsed-laser deposition. X-ray diffraction and high resolution transmission electron microscopy measurements revealed that the films deposited at PO2 of 0.06 and 0.09 Pa were single phase Cu2O and the 0.09-Pa-deposited film exhibited the best crystallinity with an epitaxial relationship of Cu2O (110)∥MgO (110) with Cu2O (001)∥MgO (001). The pure phase Cu2O films exhibited higher transmittances and larger band gaps with an optical band gap of 2.56 eV obtained for the 0.09 Pa-deposited film. Hall-effect measurements demonstrated that the Cu2O film deposited at 0.09 Pa had the lowest resistivity of 6.67 Ω cm and highest Hall mobility of 23.75 cm2 v−1 s−1.

AB - Low-resistivity, single-crystalline Cu2O films were realized on MgO (110) substrates through manipulating the oxygen pressure (PO2) of pulsed-laser deposition. X-ray diffraction and high resolution transmission electron microscopy measurements revealed that the films deposited at PO2 of 0.06 and 0.09 Pa were single phase Cu2O and the 0.09-Pa-deposited film exhibited the best crystallinity with an epitaxial relationship of Cu2O (110)∥MgO (110) with Cu2O (001)∥MgO (001). The pure phase Cu2O films exhibited higher transmittances and larger band gaps with an optical band gap of 2.56 eV obtained for the 0.09 Pa-deposited film. Hall-effect measurements demonstrated that the Cu2O film deposited at 0.09 Pa had the lowest resistivity of 6.67 Ω cm and highest Hall mobility of 23.75 cm2 v−1 s−1.

KW - Copper oxide

KW - Epitaxial

KW - Oxygen pressure

KW - PLD

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DO - 10.1016/j.apsusc.2017.11.119

M3 - Article

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SN - 0169-4332

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EP - 311

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Pulsed-laser-deposited, single-crystalline Cu₂O films with low resistivity achieved through manipulating the oxygen pressure

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Keywords

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