Pulsed THz generation from InAs/GaAs quantum-dot structures

N. S. Daghestani; M. Alduraibi; M. Missous; T. Ackemann; M. A. Cataluna

doi:10.1109/CLEOE-IQEC.2013.6800813

Pulsed THz generation from InAs/GaAs quantum-dot structures

N. S. Daghestani, M. Alduraibi, M. Missous, T. Ackemann, M. A. Cataluna

Department of Electrical & Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Photoconductive devices for THz time-domain spectroscopy systems should ideally be based on materials with short carrier lifetimes, high breakdown voltages, low dark currents, and high carrier mobilities. One of the most widely used materials for such devices is low-temperature-grown (LTG) GaAs, which in its as-grown state is relatively conductive, and as such, must be annealed in order to increase its resistivity. However, a well-known trade-off is that the annealing process also increases LTG-GaAs's carrier lifetime. In this paper, we demonstrate for the first time the use of an annealed surfactant-mediated-grown InAs/GaAs quantum-dot (QD) photoconductive antenna for pulsed THz generation, for which the annealing process did not display such trade-off. Previously, we had demonstrated THz emission from InAs/GaAs QD based photoconductive antennae using an autocorrelation interferometer setup [1]. Here, we also present the first coherent THz generation and detection results using a QD-based antenna as the emitter. © 2013 IEEE.

Original language	English
Title of host publication	2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013\|Conf. Lasers Electro-Opt. Europe Int. Quantum Electron. Conf., CLEO/Europe-IQEC
Publisher	IEEE Computer Society
ISBN (Print)	9781479905942
DOIs	https://doi.org/10.1109/CLEOE-IQEC.2013.6800813
Publication status	Published - 1 Dec 2013
Event	2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich Duration: 1 Jul 2013 → … http://www.scopus.com/inward/record.url?eid=2-s2.0-84900322495&partnerID=40&md5=b5a1d18af462a2e2b11d62260a6f18e7

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013
City	Munich
Period	1/07/13 → …
Internet address	http://www.scopus.com/inward/record.url?eid=2-s2.0-84900322495&partnerID=40&md5=b5a1d18af462a2e2b11d62260a6f18e7

Keywords

Annealing
Conductive materials
Gallium arsenide
Microwave antennas
Photoconductivity
Semiconducting gallium
Semiconductor quantum dots
Spectroscopy
Annealing process
High breakdown voltage
High carrier mobility
Low-temperature-grown GaAs
Photoconductive antennas
Photoconductive devices
Quantum dot structure
THz time domain spectroscopy
Electron optics

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10.1109/CLEOE-IQEC.2013.6800813

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Daghestani, N. S., Alduraibi, M., Missous, M., Ackemann, T., & Cataluna, M. A. (2013). Pulsed THz generation from InAs/GaAs quantum-dot structures. In 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013|Conf. Lasers Electro-Opt. Europe Int. Quantum Electron. Conf., CLEO/Europe-IQEC (Optics InfoBase Conference Papers). IEEE Computer Society . https://doi.org/10.1109/CLEOE-IQEC.2013.6800813

Daghestani, N. S. ; Alduraibi, M. ; Missous, M. et al. / Pulsed THz generation from InAs/GaAs quantum-dot structures. 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013|Conf. Lasers Electro-Opt. Europe Int. Quantum Electron. Conf., CLEO/Europe-IQEC. IEEE Computer Society , 2013. (Optics InfoBase Conference Papers).

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abstract = "Photoconductive devices for THz time-domain spectroscopy systems should ideally be based on materials with short carrier lifetimes, high breakdown voltages, low dark currents, and high carrier mobilities. One of the most widely used materials for such devices is low-temperature-grown (LTG) GaAs, which in its as-grown state is relatively conductive, and as such, must be annealed in order to increase its resistivity. However, a well-known trade-off is that the annealing process also increases LTG-GaAs's carrier lifetime. In this paper, we demonstrate for the first time the use of an annealed surfactant-mediated-grown InAs/GaAs quantum-dot (QD) photoconductive antenna for pulsed THz generation, for which the annealing process did not display such trade-off. Previously, we had demonstrated THz emission from InAs/GaAs QD based photoconductive antennae using an autocorrelation interferometer setup [1]. Here, we also present the first coherent THz generation and detection results using a QD-based antenna as the emitter. {\textcopyright} 2013 IEEE.",

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Daghestani, NS, Alduraibi, M, Missous, M, Ackemann, T & Cataluna, MA 2013, Pulsed THz generation from InAs/GaAs quantum-dot structures. in 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013|Conf. Lasers Electro-Opt. Europe Int. Quantum Electron. Conf., CLEO/Europe-IQEC. Optics InfoBase Conference Papers, IEEE Computer Society , 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013, Munich, 1/07/13. https://doi.org/10.1109/CLEOE-IQEC.2013.6800813

Pulsed THz generation from InAs/GaAs quantum-dot structures. / Daghestani, N. S.; Alduraibi, M.; Missous, M. et al.
2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013|Conf. Lasers Electro-Opt. Europe Int. Quantum Electron. Conf., CLEO/Europe-IQEC. IEEE Computer Society , 2013. (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N1 - cited By (since 1996)0; Conference of org.apache.xalan.xsltc.dom.DOMAdapter@fe7cb12 ; Conference Date: org.apache.xalan.xsltc.dom.DOMAdapter@3ac512e6 Through org.apache.xalan.xsltc.dom.DOMAdapter@605bd82e; Conference Code:105047

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N2 - Photoconductive devices for THz time-domain spectroscopy systems should ideally be based on materials with short carrier lifetimes, high breakdown voltages, low dark currents, and high carrier mobilities. One of the most widely used materials for such devices is low-temperature-grown (LTG) GaAs, which in its as-grown state is relatively conductive, and as such, must be annealed in order to increase its resistivity. However, a well-known trade-off is that the annealing process also increases LTG-GaAs's carrier lifetime. In this paper, we demonstrate for the first time the use of an annealed surfactant-mediated-grown InAs/GaAs quantum-dot (QD) photoconductive antenna for pulsed THz generation, for which the annealing process did not display such trade-off. Previously, we had demonstrated THz emission from InAs/GaAs QD based photoconductive antennae using an autocorrelation interferometer setup [1]. Here, we also present the first coherent THz generation and detection results using a QD-based antenna as the emitter. © 2013 IEEE.

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KW - Microwave antennas

KW - Photoconductivity

KW - Semiconducting gallium

KW - Semiconductor quantum dots

KW - Spectroscopy

KW - Annealing process

KW - High breakdown voltage

KW - High carrier mobility

KW - Low-temperature-grown GaAs

KW - Photoconductive antennas

KW - Photoconductive devices

KW - Quantum dot structure

KW - THz time domain spectroscopy

KW - Electron optics

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M3 - Conference contribution

SN - 9781479905942

T3 - Optics InfoBase Conference Papers

BT - 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013|Conf. Lasers Electro-Opt. Europe Int. Quantum Electron. Conf., CLEO/Europe-IQEC

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Daghestani NS, Alduraibi M, Missous M, Ackemann T, Cataluna MA. Pulsed THz generation from InAs/GaAs quantum-dot structures. In 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013|Conf. Lasers Electro-Opt. Europe Int. Quantum Electron. Conf., CLEO/Europe-IQEC. IEEE Computer Society . 2013. (Optics InfoBase Conference Papers). doi: 10.1109/CLEOE-IQEC.2013.6800813

Pulsed THz generation from InAs/GaAs quantum-dot structures

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