Quantitative analysis of hysteresis in carbon nanotube field-effect devices

Swastik Kar; Aravind Vijayaraghavan; Caterina Soldano; Saikat Talapatra; Robert Vajtai; Omkaram Nalamasu; Pulickel M. Ajayan

doi:10.1063/1.2358290

Quantitative analysis of hysteresis in carbon nanotube field-effect devices

Swastik Kar, Aravind Vijayaraghavan, Caterina Soldano, Saikat Talapatra, Robert Vajtai, Omkaram Nalamasu, Pulickel M. Ajayan

Research output: Contribution to journal › Article › peer-review

Abstract

The authors present a model to analyze hysteresis in transfer characteristics (TCs) of single-wall carbon nanotube field-effect transistors, based on capacitive charging of the surrounding dielectric by charges injected out of the nanotube. The model identifies the extent and time scale of the hysteresis and correctly describes the dependence of the magnitude of hysteresis on common experimental parameters. The authors propose and experimentally establish a "time-decay" experiment for obtaining accurate device properties in hysteresis-affected devices without actually measuring TCs. The authors further show that values obtained by this method can be used to precisely predict TCs for the same device under different experimental parameters. © 2006 American Institute of Physics.

Original language	English
Article number	132118
Journal	Applied Physics Letters
Volume	89
Issue number	13
DOIs	https://doi.org/10.1063/1.2358290
Publication status	Published - 2006

Access to Document

10.1063/1.2358290

Cite this

@article{e542f3bf9cab44d290fce94d8154646f,

title = "Quantitative analysis of hysteresis in carbon nanotube field-effect devices",

abstract = "The authors present a model to analyze hysteresis in transfer characteristics (TCs) of single-wall carbon nanotube field-effect transistors, based on capacitive charging of the surrounding dielectric by charges injected out of the nanotube. The model identifies the extent and time scale of the hysteresis and correctly describes the dependence of the magnitude of hysteresis on common experimental parameters. The authors propose and experimentally establish a {"}time-decay{"} experiment for obtaining accurate device properties in hysteresis-affected devices without actually measuring TCs. The authors further show that values obtained by this method can be used to precisely predict TCs for the same device under different experimental parameters. {\textcopyright} 2006 American Institute of Physics.",

author = "Swastik Kar and Aravind Vijayaraghavan and Caterina Soldano and Saikat Talapatra and Robert Vajtai and Omkaram Nalamasu and Ajayan, {Pulickel M.}",

note = "Kar, Swastik Vijayaraghavan, Aravind Soldano, Caterina Talapatra, Saikat Vajtai, Robert Nalamasu, Omkaram Ajayan, Pulickel M.",

year = "2006",

doi = "10.1063/1.2358290",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Quantitative analysis of hysteresis in carbon nanotube field-effect devices

AU - Kar, Swastik

AU - Vijayaraghavan, Aravind

AU - Soldano, Caterina

AU - Talapatra, Saikat

AU - Vajtai, Robert

AU - Nalamasu, Omkaram

AU - Ajayan, Pulickel M.

N1 - Kar, Swastik Vijayaraghavan, Aravind Soldano, Caterina Talapatra, Saikat Vajtai, Robert Nalamasu, Omkaram Ajayan, Pulickel M.

PY - 2006

Y1 - 2006

N2 - The authors present a model to analyze hysteresis in transfer characteristics (TCs) of single-wall carbon nanotube field-effect transistors, based on capacitive charging of the surrounding dielectric by charges injected out of the nanotube. The model identifies the extent and time scale of the hysteresis and correctly describes the dependence of the magnitude of hysteresis on common experimental parameters. The authors propose and experimentally establish a "time-decay" experiment for obtaining accurate device properties in hysteresis-affected devices without actually measuring TCs. The authors further show that values obtained by this method can be used to precisely predict TCs for the same device under different experimental parameters. © 2006 American Institute of Physics.

AB - The authors present a model to analyze hysteresis in transfer characteristics (TCs) of single-wall carbon nanotube field-effect transistors, based on capacitive charging of the surrounding dielectric by charges injected out of the nanotube. The model identifies the extent and time scale of the hysteresis and correctly describes the dependence of the magnitude of hysteresis on common experimental parameters. The authors propose and experimentally establish a "time-decay" experiment for obtaining accurate device properties in hysteresis-affected devices without actually measuring TCs. The authors further show that values obtained by this method can be used to precisely predict TCs for the same device under different experimental parameters. © 2006 American Institute of Physics.

U2 - 10.1063/1.2358290

DO - 10.1063/1.2358290

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132118

ER -

Quantitative analysis of hysteresis in carbon nanotube field-effect devices

Abstract

Access to Document

Fingerprint

Cite this