Quantized coexisting electrons and holes in graphene measured using temperature-dependent magnetotransport

E. V. Kurganova, S. Wiedmann, A. J M Giesbers, R. V. Gorbachev, K. S. Novoselov, M. I. Katsnelson, T. Tudorovskiy, J. C. Maan, U. Zeitler

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    We present temperature-dependent magnetotransport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations s responsible for the formation of electron-hole puddles. The experimental value s≈20 meV is considerably larger than in conventional semiconductors, which implies a strong localization of charge carriers observable up to room temperature. Surprisingly, in the quantized regime, the Hall resistivity overshoots the highest plateau values at high temperatures. We demonstrate by model calculations that such a peculiar behavior is expected in any system with coexisting electrons and holes when the energy spectrum is quantized and the carriers are partially localized. © 2013 American Physical Society.
    Original languageEnglish
    Article number085447
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Issue number8
    Publication statusPublished - 28 Feb 2013


    • bilayer graphene
    • hall


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