Quantum anomalous Hall effect for metrology

Nathaniel J. Huáng; Jessica L. Boland; Kajetan M. Fijalkowski; Charles Gould; Thorsten Hesjedal; Olga Kazakova; Susmit Kumar; Hansjörg Scherer

doi:10.1063/5.0233689

Quantum anomalous Hall effect for metrology

Nathaniel J. Huáng, Jessica L. Boland, Kajetan M. Fijalkowski, Charles Gould, Thorsten Hesjedal, Olga Kazakova, Susmit Kumar, Hansjörg Scherer

Materials Engineering

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Abstract

The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal “quantum electrical metrology toolbox” that can perform quantum resistance, voltage, and current metrology in a single instrument. To realize such promise, significant progress is still required to address materials and metrological challenges—among which, one main challenge is to make the bulk of the topological insulator sufficiently insulating to improve the robustness of resistance quantization. In this Perspective, we present an overview of the QAHE; discuss the aspects of topological material growth and characterization; and present a path toward a QAHE resistance standard realized in magnetically doped (Bi,Sb)2Te3 systems. We also present guidelines and methodologies for QAHE resistance metrology, its main limitations and challenges, as well as modern strategies to overcome them.

Original language	English
Article number	040501
Journal	Applied Physics Letters
Volume	126
DOIs	https://doi.org/10.1063/5.0233689
Publication status	Published - 27 Jan 2025

Research Beacons, Institutes and Platforms

Henry Royce Institute
Photon Science Institute

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10.1063/5.0233689

Huang_et_al_2025_Quantum_anomalous_HallAccepted author manuscript, 2.32 MBLicence: CC BY

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Terahertz, Topology, Technology: Realising the potential of nanoscale Dirac materials using near-field terahertz spectroscopy
Boland, J. (PI)
1/07/20 → 31/07/25
Project: Research
Cryogenic Ultrafast Scattering-type Terahertz-probe Optical-pump Microscopy (CUSTOM)
Curry, R. (PI), Boland, J. (CoI), Flavell, W. (CoI), Kinloch, I. (CoI) & Kocabas, C. (CoI)
1/02/20 → 31/07/22
Project: Research

Cite this

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title = "Quantum anomalous Hall effect for metrology",

abstract = "The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal “quantum electrical metrology toolbox” that can perform quantum resistance, voltage, and current metrology in a single instrument. To realize such promise, significant progress is still required to address materials and metrological challenges—among which, one main challenge is to make the bulk of the topological insulator sufficiently insulating to improve the robustness of resistance quantization. In this Perspective, we present an overview of the QAHE; discuss the aspects of topological material growth and characterization; and present a path toward a QAHE resistance standard realized in magnetically doped (Bi,Sb)2Te3 systems. We also present guidelines and methodologies for QAHE resistance metrology, its main limitations and challenges, as well as modern strategies to overcome them.",

author = "Hu{\'a}ng, {Nathaniel J.} and Boland, {Jessica L.} and Fijalkowski, {Kajetan M.} and Charles Gould and Thorsten Hesjedal and Olga Kazakova and Susmit Kumar and Hansj{\"o}rg Scherer",

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doi = "10.1063/5.0233689",

language = "English",

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T1 - Quantum anomalous Hall effect for metrology

AU - Huáng, Nathaniel J.

AU - Boland, Jessica L.

AU - Fijalkowski, Kajetan M.

AU - Gould, Charles

AU - Hesjedal, Thorsten

AU - Kazakova, Olga

AU - Kumar, Susmit

AU - Scherer, Hansjörg

PY - 2025/1/27

Y1 - 2025/1/27

N2 - The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal “quantum electrical metrology toolbox” that can perform quantum resistance, voltage, and current metrology in a single instrument. To realize such promise, significant progress is still required to address materials and metrological challenges—among which, one main challenge is to make the bulk of the topological insulator sufficiently insulating to improve the robustness of resistance quantization. In this Perspective, we present an overview of the QAHE; discuss the aspects of topological material growth and characterization; and present a path toward a QAHE resistance standard realized in magnetically doped (Bi,Sb)2Te3 systems. We also present guidelines and methodologies for QAHE resistance metrology, its main limitations and challenges, as well as modern strategies to overcome them.

AB - The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal “quantum electrical metrology toolbox” that can perform quantum resistance, voltage, and current metrology in a single instrument. To realize such promise, significant progress is still required to address materials and metrological challenges—among which, one main challenge is to make the bulk of the topological insulator sufficiently insulating to improve the robustness of resistance quantization. In this Perspective, we present an overview of the QAHE; discuss the aspects of topological material growth and characterization; and present a path toward a QAHE resistance standard realized in magnetically doped (Bi,Sb)2Te3 systems. We also present guidelines and methodologies for QAHE resistance metrology, its main limitations and challenges, as well as modern strategies to overcome them.

U2 - 10.1063/5.0233689

DO - 10.1063/5.0233689

M3 - Article

SN - 0003-6951

VL - 126

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 040501

ER -

Quantum anomalous Hall effect for metrology

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Terahertz, Topology, Technology: Realising the potential of nanoscale Dirac materials using near-field terahertz spectroscopy

Cryogenic Ultrafast Scattering-type Terahertz-probe Optical-pump Microscopy (CUSTOM)

Cite this