Quantum hall effect and quantum point contact in bilayer-patched epitaxial graphene

Cassandra Chua, Malcolm Connolly, Arseniy Lartsev, Tom Yager, Samuel Lara-Avila, Sergey Kubatkin, Sergey Kopylov, Vladimir Fal'Ko, Rositza Yakimova, Ruth Pearce, T. J B M Janssen, Alexander Tzalenchuk, Charles Smith

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

    Original languageEnglish
    Pages (from-to)3369-3373
    Number of pages5
    JournalNano Letters
    Volume14
    Issue number6
    DOIs
    Publication statusPublished - 11 Jun 2014

    Keywords

    • monolayer and bilayer graphene
    • quantum hall effect
    • quantum point contact
    • resistance metrology
    • scanning gate microscopy
    • SiC epitaxial graphene

    Research Beacons, Institutes and Platforms

    • National Graphene Institute

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