Abstract
We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.
Original language | English |
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Pages (from-to) | 3369-3373 |
Number of pages | 5 |
Journal | Nano Letters |
Volume | 14 |
Issue number | 6 |
DOIs | |
Publication status | Published - 11 Jun 2014 |
Keywords
- monolayer and bilayer graphene
- quantum hall effect
- quantum point contact
- resistance metrology
- scanning gate microscopy
- SiC epitaxial graphene
Research Beacons, Institutes and Platforms
- National Graphene Institute