Quantum resistance metrology in graphene

A. J M Giesbers, G. Rietveld, E. Houtzager, U. Zeitler, R. Yang, K. S. Novoselov, A. K. Geim, J. C. Maan

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We performed a metrological characterization of the quantum Hall resistance in a 1 μm wide graphene Hall bar. The longitudinal resistivity in the center of the ν=±2 quantum Hall plateaus vanishes within the measurement noise of 20 mΩ up to 2 μA. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5 μA current) equal to that in conventional semiconductors. The principal limitation of the present experiments is the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied. © 2008 American Institute of Physics.
    Original languageEnglish
    Article number222109
    JournalApplied Physics Letters
    Volume93
    Issue number22
    DOIs
    Publication statusPublished - 2008

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