Abstract
We propose a method of measuring the electron temperature Te in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime (Te≈T, the bath temperature). The method can be especially useful in case of overheating, Te>T. It is based on analysis of the correlation function of mesoscopic conductance fluctuations. Although the fluctuation amplitude strongly depends on the details of electron scattering in graphene, we show that Te extracted from the correlation function is insensitive to these details.
Original language | English |
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Article number | 066801 |
Journal | Physical Review Letters |
Volume | 102 |
Issue number | 6 |
DOIs | |
Publication status | Published - 9 Feb 2009 |
Research Beacons, Institutes and Platforms
- National Graphene Institute