Radiation hardness properties of full-3D active edge silicon sensors

C. Da Viá, J. Hasi, C. Kenney, V. Linhart, Sherwood Parker, T. Slavicek, S. J. Watts, P. Bem, T. Horazdovsky, S. Pospisil

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Full-three-dimensional (3D) pixel sensors, with electrodes penetrating through the entire silicon wafer, were fabricated at the Stanford Nanofabrication Facility, Stanford, California, USA. They have 71-μm-inter-electrode spacing, active edges and a compatible geometry to the ATLAS pixel detector readout electronics. Several samples were irradiated with neutrons to different doses up to an equivalent fluence of 8.6×1015 n1 MeVeq cm-2. This corresponds to the integrated fluence expected after ∼5 years at the Large Hadron Collider (LHC) with a luminosity of 1035 cm-2 s-1 at 4 cm from the interaction point, where the ATLAS B-Layer is placed. Before and after irradiation, signals were generated by a 1060 nm infrared laser calibrated to inject a charge of 14 fC. This corresponds to ∼3.5 minimum ionizing particles and should not perturb the charge status of the radiation-induced defects. After 8.6×1015 n1 MeVeq cm-2 the signal collected was ∼38% and corresponded to ∼7200e- for a substrate thickness of 235 μm. Signal efficiency, radiation-induced leakage current and related damage parameters are discussed here and compared with simulations. Full-3D silicon detectors with active edges are being considered for forward proton tagging at the LHC, for the ATLAS pixel B-layer replacement and for the ATLAS pixel upgrade. © 2007 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)243-249
    Number of pages6
    JournalNuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
    Volume587
    Issue number2-3
    DOIs
    Publication statusPublished - 21 Mar 2008

    Keywords

    • 3D
    • Radiation hardness
    • Silicon detectors
    • SLHC

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