Radiation-induced defect reactions in Cz-Si crystals contaminated with Cu

V. P. Markevich; A. R. Peaker; I. F. Medvedeva; V. E. Gusakov; L. I. Murin; B. G. Svensson

Radiation-induced defect reactions in Cz-Si crystals contaminated with Cu

V. P. Markevich^*, A. R. Peaker, I. F. Medvedeva, V. E. Gusakov, L. I. Murin, B. G. Svensson

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

The influence of Cu contamination on radiation-induced defect reactions in n-type Czochralski-grown silicon (Cz-Si) crystals has been studied by means of the Hall effect technique, deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS with supporting theoretical modeling of defects. It is found that the contamination of Cz-Si samples with Cu does not influence significantly the energy spectrum and introduction rates of the principal electrically active defects induced by electron irradiation. The vacancy-oxygen (VO) centre, divacancy (V₂) and a complex consisting of a silicon self-interstitial with the oxygen dimer (IO₂) are found to be the dominant radiation-induced defects in Cu-contaminated samples as well as in uncontaminated ones. An isochronal annealing study has shown that the presence of Cu affects the annealing behaviour of the vacancy-related defects. In Cu-doped samples the VO centre disappears upon annealing at significantly lower temperatures (175-250°C) compared to those of the VO disappearance in the uncontaminated samples (300-375°C). The disappearance of the VO centres in the Cu-doped samples occurs simultaneously with an anti-correlated introduction of a defect with an energy level at about E_c0.60 eV. It is suggested that this defect is formed by the interaction of a mobile Cu atom with the VO complex. According to results of quantum-chemical modelling, in the most stable configuration of the Cu-VO defect a Cu atom occupies a tetrahedral interstitial position nearest to the elongated Si-Si bond of the VO centre. The presence of the Cu atom is found to result in the further elongation of the Si-Si bond and a shift of the VO acceptor level to the middle of the gap. The annealing behaviour of V₂ has also been found to be different in the irradiated Cu-doped samples compared to that in the uncontaminated ones. The most probable reason for this difference is an interaction of mobile Cu atoms with di-vacancies. An energy level at about E_c-0.17 eV has been tentatively assigned to a complex consisting of a Cu atom and a di-vacancy.

Original language	English
Pages (from-to)	363-368
Number of pages	6
Journal	Solid State Phenomena
Volume	131-133
Publication status	Published - 1 Jan 2008
Event	12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 - Erice, Italy Duration: 14 Oct 2007 → 19 Oct 2007

Keywords

Copper
Deep levels
Defect reactions
Irradiation
Silicon

Research Beacons, Institutes and Platforms

Photon Science Institute

Cite this

@article{246a92ca748e4cddab12431f6d35813e,

title = "Radiation-induced defect reactions in Cz-Si crystals contaminated with Cu",

abstract = "The influence of Cu contamination on radiation-induced defect reactions in n-type Czochralski-grown silicon (Cz-Si) crystals has been studied by means of the Hall effect technique, deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS with supporting theoretical modeling of defects. It is found that the contamination of Cz-Si samples with Cu does not influence significantly the energy spectrum and introduction rates of the principal electrically active defects induced by electron irradiation. The vacancy-oxygen (VO) centre, divacancy (V2) and a complex consisting of a silicon self-interstitial with the oxygen dimer (IO2) are found to be the dominant radiation-induced defects in Cu-contaminated samples as well as in uncontaminated ones. An isochronal annealing study has shown that the presence of Cu affects the annealing behaviour of the vacancy-related defects. In Cu-doped samples the VO centre disappears upon annealing at significantly lower temperatures (175-250°C) compared to those of the VO disappearance in the uncontaminated samples (300-375°C). The disappearance of the VO centres in the Cu-doped samples occurs simultaneously with an anti-correlated introduction of a defect with an energy level at about Ec0.60 eV. It is suggested that this defect is formed by the interaction of a mobile Cu atom with the VO complex. According to results of quantum-chemical modelling, in the most stable configuration of the Cu-VO defect a Cu atom occupies a tetrahedral interstitial position nearest to the elongated Si-Si bond of the VO centre. The presence of the Cu atom is found to result in the further elongation of the Si-Si bond and a shift of the VO acceptor level to the middle of the gap. The annealing behaviour of V2 has also been found to be different in the irradiated Cu-doped samples compared to that in the uncontaminated ones. The most probable reason for this difference is an interaction of mobile Cu atoms with di-vacancies. An energy level at about Ec-0.17 eV has been tentatively assigned to a complex consisting of a Cu atom and a di-vacancy.",

keywords = "Copper, Deep levels, Defect reactions, Irradiation, Silicon",

author = "Markevich, {V. P.} and Peaker, {A. R.} and Medvedeva, {I. F.} and Gusakov, {V. E.} and Murin, {L. I.} and Svensson, {B. G.}",

year = "2008",

month = jan,

day = "1",

language = "English",

volume = "131-133",

pages = "363--368",

journal = "Solid State Phenomena",

issn = "1012-0394",

publisher = "Trans Tech Publications Ltd",

note = "12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 ; Conference date: 14-10-2007 Through 19-10-2007",

}

TY - JOUR

T1 - Radiation-induced defect reactions in Cz-Si crystals contaminated with Cu

AU - Markevich, V. P.

AU - Peaker, A. R.

AU - Medvedeva, I. F.

AU - Gusakov, V. E.

AU - Murin, L. I.

AU - Svensson, B. G.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - The influence of Cu contamination on radiation-induced defect reactions in n-type Czochralski-grown silicon (Cz-Si) crystals has been studied by means of the Hall effect technique, deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS with supporting theoretical modeling of defects. It is found that the contamination of Cz-Si samples with Cu does not influence significantly the energy spectrum and introduction rates of the principal electrically active defects induced by electron irradiation. The vacancy-oxygen (VO) centre, divacancy (V2) and a complex consisting of a silicon self-interstitial with the oxygen dimer (IO2) are found to be the dominant radiation-induced defects in Cu-contaminated samples as well as in uncontaminated ones. An isochronal annealing study has shown that the presence of Cu affects the annealing behaviour of the vacancy-related defects. In Cu-doped samples the VO centre disappears upon annealing at significantly lower temperatures (175-250°C) compared to those of the VO disappearance in the uncontaminated samples (300-375°C). The disappearance of the VO centres in the Cu-doped samples occurs simultaneously with an anti-correlated introduction of a defect with an energy level at about Ec0.60 eV. It is suggested that this defect is formed by the interaction of a mobile Cu atom with the VO complex. According to results of quantum-chemical modelling, in the most stable configuration of the Cu-VO defect a Cu atom occupies a tetrahedral interstitial position nearest to the elongated Si-Si bond of the VO centre. The presence of the Cu atom is found to result in the further elongation of the Si-Si bond and a shift of the VO acceptor level to the middle of the gap. The annealing behaviour of V2 has also been found to be different in the irradiated Cu-doped samples compared to that in the uncontaminated ones. The most probable reason for this difference is an interaction of mobile Cu atoms with di-vacancies. An energy level at about Ec-0.17 eV has been tentatively assigned to a complex consisting of a Cu atom and a di-vacancy.

AB - The influence of Cu contamination on radiation-induced defect reactions in n-type Czochralski-grown silicon (Cz-Si) crystals has been studied by means of the Hall effect technique, deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS with supporting theoretical modeling of defects. It is found that the contamination of Cz-Si samples with Cu does not influence significantly the energy spectrum and introduction rates of the principal electrically active defects induced by electron irradiation. The vacancy-oxygen (VO) centre, divacancy (V2) and a complex consisting of a silicon self-interstitial with the oxygen dimer (IO2) are found to be the dominant radiation-induced defects in Cu-contaminated samples as well as in uncontaminated ones. An isochronal annealing study has shown that the presence of Cu affects the annealing behaviour of the vacancy-related defects. In Cu-doped samples the VO centre disappears upon annealing at significantly lower temperatures (175-250°C) compared to those of the VO disappearance in the uncontaminated samples (300-375°C). The disappearance of the VO centres in the Cu-doped samples occurs simultaneously with an anti-correlated introduction of a defect with an energy level at about Ec0.60 eV. It is suggested that this defect is formed by the interaction of a mobile Cu atom with the VO complex. According to results of quantum-chemical modelling, in the most stable configuration of the Cu-VO defect a Cu atom occupies a tetrahedral interstitial position nearest to the elongated Si-Si bond of the VO centre. The presence of the Cu atom is found to result in the further elongation of the Si-Si bond and a shift of the VO acceptor level to the middle of the gap. The annealing behaviour of V2 has also been found to be different in the irradiated Cu-doped samples compared to that in the uncontaminated ones. The most probable reason for this difference is an interaction of mobile Cu atoms with di-vacancies. An energy level at about Ec-0.17 eV has been tentatively assigned to a complex consisting of a Cu atom and a di-vacancy.

KW - Copper

KW - Deep levels

KW - Defect reactions

KW - Irradiation

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=38549162637&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:38549162637

SN - 1012-0394

VL - 131-133

SP - 363

EP - 368

JO - Solid State Phenomena

JF - Solid State Phenomena

T2 - 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007

Y2 - 14 October 2007 through 19 October 2007

ER -

Radiation-induced defect reactions in Cz-Si crystals contaminated with Cu

Abstract

Keywords

Research Beacons, Institutes and Platforms

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