Radiation-induced defects and their transformations in oxygen-rich germanium crystals

V. P. Markevich, V. V. Litvinov, L. Dobaczewski, J. L. Lindström, L. I. Murin, A. R. Peaker

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Defects induced by irradiation with fast electrons and 60Co gamma-rays in oxygen-rich Ge crystals have been studied by means of infrared absorption, deep level transient spectroscopy (DLTS) and Hall effect measurements. It is found that the vacancy-oxygen (V-O) complex in Ge has three charge states (doubly negative, singly negative and neutral ones) and two corresponding energy levels in the gap at about Ec - 0.21 eV and Ev + 0.27 eV. Three absorption bands at 621.4, 669.1 and 716.2 cm-1 are identified as oxygen-related asymmetrical stretching vibrations for the neutral, singly negatively charged and doubly negatively charged states of the V-O complex, respectively.

Original languageEnglish
Title of host publicationPhysica Status Solidi Conferences
PublisherJohn Wiley & Sons Ltd
Pages702-706
Number of pages5
Edition2
ISBN (Print)352740435X, 9783527404353
DOIs
Publication statusPublished - 1 Jan 2003
EventProceedings 10th International Conference on Shallow Level Centers in Semiconductors (SLCS-10) - Warsaw, Poland
Duration: 24 Jul 200227 Jul 2002

Publication series

NamePhysica Status Solidi Conferences
Number2

Conference

ConferenceProceedings 10th International Conference on Shallow Level Centers in Semiconductors (SLCS-10)
Country/TerritoryPoland
CityWarsaw
Period24/07/0227/07/02

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