@inproceedings{9b27c35de61c43b592fae18832e685c1,
title = "Radiation-induced defects and their transformations in oxygen-rich germanium crystals",
abstract = "Defects induced by irradiation with fast electrons and 60Co gamma-rays in oxygen-rich Ge crystals have been studied by means of infrared absorption, deep level transient spectroscopy (DLTS) and Hall effect measurements. It is found that the vacancy-oxygen (V-O) complex in Ge has three charge states (doubly negative, singly negative and neutral ones) and two corresponding energy levels in the gap at about Ec - 0.21 eV and Ev + 0.27 eV. Three absorption bands at 621.4, 669.1 and 716.2 cm-1 are identified as oxygen-related asymmetrical stretching vibrations for the neutral, singly negatively charged and doubly negatively charged states of the V-O complex, respectively.",
author = "Markevich, {V. P.} and Litvinov, {V. V.} and L. Dobaczewski and Lindstr{\"o}m, {J. L.} and Murin, {L. I.} and Peaker, {A. R.}",
year = "2003",
month = jan,
day = "1",
doi = "10.1002/pssc.200306214",
language = "English",
isbn = "352740435X",
series = "Physica Status Solidi Conferences",
publisher = "John Wiley & Sons Ltd",
number = "2",
pages = "702--706",
booktitle = "Physica Status Solidi Conferences",
address = "United Kingdom",
edition = "2",
note = "Proceedings 10th International Conference on Shallow Level Centers in Semiconductors (SLCS-10) ; Conference date: 24-07-2002 Through 27-07-2002",
}