Raman fingerprint of aligned graphene/h-BN superlattices

Axel Eckmann, Jaesung Park, Huafeng Yang, Daniel Elias, Alexander S. Mayorov, Geliang Yu, Rashid Jalil, Kostya S. Novoselov, Roman V. Gorbachev, Michele Lazzeri, Andre K. Geim, Cinzia Casiraghi

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Graphene placed on hexagonal-boron nitride (h-BN) experiences a superlattice (Moiré) potential, which leads to a strong reconstruction of graphene's electronic spectrum with new Dirac points emerging at sub-eV energies. Here we study the effect of such superlattices on graphene's Raman spectrum. In particular, the 2D Raman peak is found to be exquisitely sensitive to the misalignment between graphene and h-BN lattices, probably due to the presence of a strain distribution with the same periodicity of the Moiré potential. This feature can be used to identify graphene superlattices with a misalignment angle smaller than 2. © 2013 American Chemical Society.
    Original languageEnglish
    Pages (from-to)5242-5246
    Number of pages4
    JournalNano Letters
    Volume13
    Issue number11
    DOIs
    Publication statusPublished - 13 Nov 2013

    Keywords

    • boron nitride
    • Graphene
    • Raman spectroscopy
    • superlattice

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