Raman fingerprint of charged impurities in graphene

C. Casiraghi, S. Pisana, K. S. Novoselov, A. K. Geim, A. C. Ferrari

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage. This reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to ∼ 1013 cm-2 are estimated from the G peak shift and width and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on a scale of less than 1 μm. © 2007 American Institute of Physics.
    Original languageEnglish
    Article number233108
    JournalApplied Physics Letters
    Volume91
    Issue number23
    DOIs
    Publication statusPublished - 2007

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