Rapid and up-scalable manufacturing of gigahertz nanogap diodes

K Loganathan; H Faber; E Yengel; A Seitkhan; A Bakytbekov; E Yarali; B Adilbekova; A AlBatati; YB Lin; Z Felemban; S Yang; WW Li; DG Georgiadou; A Shamim; E Lidorikis; TD Anthopoulos

doi:10.1038/s41467-022-30876-6

Rapid and up-scalable manufacturing of gigahertz nanogap diodes

K Loganathan, H Faber, E Yengel, A Seitkhan, A Bakytbekov, E Yarali, B Adilbekova, A AlBatati, YB Lin, Z Felemban, S Yang, WW Li, DG Georgiadou, A Shamim, E Lidorikis, TD Anthopoulos

Research output: Contribution to conference › Paper › peer-review

Abstract

The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned <10 nm nanogaps and flash-lamp annealing to demonstrate rapid manufacturing of nanogap Schottky diodes over arbitrary size substrates operating in 5 G frequencies. These diodes combine low junction capacitance with low turn-on voltage while exhibiting cut-off frequencies (intrinsic) of >100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest largearea electronic devices demonstrated to date.

Original language	English
Number of pages	8
DOIs	https://doi.org/10.1038/s41467-022-30876-6
Publication status	Published - Dec 2022

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10.1038/s41467-022-30876-6Licence: CC BY

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title = "Rapid and up-scalable manufacturing of gigahertz nanogap diodes",

abstract = "The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned <10 nm nanogaps and flash-lamp annealing to demonstrate rapid manufacturing of nanogap Schottky diodes over arbitrary size substrates operating in 5 G frequencies. These diodes combine low junction capacitance with low turn-on voltage while exhibiting cut-off frequencies (intrinsic) of >100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest largearea electronic devices demonstrated to date.",

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T1 - Rapid and up-scalable manufacturing of gigahertz nanogap diodes

AU - Loganathan, K

AU - Faber, H

AU - Yengel, E

AU - Seitkhan, A

AU - Bakytbekov, A

AU - Yarali, E

AU - Adilbekova, B

AU - AlBatati, A

AU - Lin, YB

AU - Felemban, Z

AU - Yang, S

AU - Li, WW

AU - Georgiadou, DG

AU - Shamim, A

AU - Lidorikis, E

AU - Anthopoulos, TD

PY - 2022/12

Y1 - 2022/12

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AB - The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned <10 nm nanogaps and flash-lamp annealing to demonstrate rapid manufacturing of nanogap Schottky diodes over arbitrary size substrates operating in 5 G frequencies. These diodes combine low junction capacitance with low turn-on voltage while exhibiting cut-off frequencies (intrinsic) of >100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest largearea electronic devices demonstrated to date.

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ER -

Rapid and up-scalable manufacturing of gigahertz nanogap diodes

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