Reactive Intercalation and Oxidation at the Buried Graphene‐Germanium Interface

Philipp Braeuninger-Weimer, Oliver J. Burton, Robert Weatherup, Ruizhi Wang, Pavel Dudin, Barry Brennan, Andrew J. Pollard, Bernhard C. Bayer, Vlad P. Veigang-Radulescu, Jannik C. Meyer, Billy J. Murdoch, Peter J. Cumpson, Stephan Hofmann

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We explore a number of different electrochemical, wet chemical and gas phase
    approaches to study intercalation and oxidation at the buried graphene‐Ge interface. While previous literature focussed on the passivation of the Ge surface by chemical vapour deposited graphene, we show that particularly via electrochemical intercalation in a 0.25 N solution of anhydrous sodium acetate in glacial acetic acid this passivation can be overcome to grow GeO2 under graphene. Angle resolved photoemission spectroscopy, Raman spectroscopy, He ion microscopy and time‐of‐flight secondary ion mass spectrometry show that the mono‐layer graphene remains undamaged and its intrinsic strain is released by the interface oxidation. Graphene acts as a protection layer for the asgrown Ge oxide, and we discuss how these insights can be utilised for new processing
    approaches.
    Original languageEnglish
    JournalAPL Materials
    Early online date17 Jul 2019
    DOIs
    Publication statusPublished - 2019

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