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Abstract
approaches to study intercalation and oxidation at the buried graphene‐Ge interface. While previous literature focussed on the passivation of the Ge surface by chemical vapour deposited graphene, we show that particularly via electrochemical intercalation in a 0.25 N solution of anhydrous sodium acetate in glacial acetic acid this passivation can be overcome to grow GeO2 under graphene. Angle resolved photoemission spectroscopy, Raman spectroscopy, He ion microscopy and time‐of‐flight secondary ion mass spectrometry show that the mono‐layer graphene remains undamaged and its intrinsic strain is released by the interface oxidation. Graphene acts as a protection layer for the asgrown Ge oxide, and we discuss how these insights can be utilised for new processing
approaches.
Original language | English |
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Journal | APL Materials |
Early online date | 17 Jul 2019 |
DOIs | |
Publication status | Published - 2019 |
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Dive into the research topics of 'Reactive Intercalation and Oxidation at the Buried Graphene‐Germanium Interface'. Together they form a unique fingerprint.Projects
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UoMaH: The University of Manchester at Harwell
Lawrence, J. (PI), Burnett, T. (PI), Baker, M. (Researcher), Eastwood, D. (Researcher), Hunt, S. (Researcher), Yan, K. (Researcher), Khan, A. (Researcher), Ma, L. (Researcher), Mirihanage, W. (Researcher), Parlett, C. (Researcher), Freitas, D. (Researcher), Reinhard, C. (Support team), Duggins, D. (Technical team), Lewis-Fell, J. (Technical team), Nonni, S. (Technical team), Rollings, B. (Technical team), Sinclair, L. (Technical team) & Batts, S. (Support team)
1/01/18 → …
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