Recent progress in 2D group-VA semiconductors: from theory to experiment

Shengli Zhang, Shiying Guo, Zhongfang Chen, Yeliang Wang, Hongjun Gao, Julio Gomez-Herrero, Pablo Ares, Felix Zamora, Zhen Zhu, Haibo Zeng

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    Abstract

    This review provides recent theoretical and experimental progress in the fundamental properties, electronic modulations, fabrications and applications of 2D group-VA materials.Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.
    Original languageEnglish
    Pages (from-to)982-1021
    Number of pages40
    JournalChemical Society Reviews
    Volume47
    Issue number3
    Early online date6 Dec 2017
    DOIs
    Publication statusPublished - Jul 2018

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