Recombination and radiation damage in crystalline silicon solar cell material

A. R. Peaker; V. P. Markevich; L. Dobaczewski

doi:10.1002/pssc.200404841

Recombination and radiation damage in crystalline silicon solar cell material

A. R. Peaker^*, V. P. Markevich, L. Dobaczewski

^*Corresponding author for this work

EEE - Academic & Research

Research output: Contribution to journal › Article › peer-review

Abstract

This article reviews the carrier recombination mechanisms which degrade crystalline solar cells as a result of exposure to light (photo-degradation) and in the case of satellite cells after exposure to energetic electrons in space. The role of impurities is considered and in particular contamination with iron and the formation of metastable boron-oxygen complexes. The application of high resolution (Laplace) deep level transient spectroscopy in the structural identification of the induced defects is discussed with a view to controlling their formation by defect engineering.

Original language	English
Pages (from-to)	2274-2281
Number of pages	8
Journal	Physica Status Solidi C: Conferences
Volume	1
Issue number	9
DOIs	https://doi.org/10.1002/pssc.200404841
Publication status	Published - 30 Jul 2004

Keywords

61.82.Fk
71.55.Cn
72.20.Jv
84.60.Jt

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/pssc.200404841

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AU - Peaker, A. R.

AU - Markevich, V. P.

AU - Dobaczewski, L.

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AB - This article reviews the carrier recombination mechanisms which degrade crystalline solar cells as a result of exposure to light (photo-degradation) and in the case of satellite cells after exposure to energetic electrons in space. The role of impurities is considered and in particular contamination with iron and the formation of metastable boron-oxygen complexes. The application of high resolution (Laplace) deep level transient spectroscopy in the structural identification of the induced defects is discussed with a view to controlling their formation by defect engineering.

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KW - 71.55.Cn

KW - 72.20.Jv

KW - 84.60.Jt

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JO - Physica Status Solidi C: Conferences

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IS - 9

ER -

Recombination and radiation damage in crystalline silicon solar cell material

Abstract

Keywords

UN SDGs

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