Recombination and radiation damage in crystalline silicon solar cell material

A. R. Peaker, V. P. Markevich, L. Dobaczewski

Research output: Contribution to journalArticlepeer-review

Abstract

This article reviews the carrier recombination mechanisms which degrade crystalline solar cells as a result of exposure to light (photo-degradation) and in the case of satellite cells after exposure to energetic electrons in space. The role of impurities is considered and in particular contamination with iron and the formation of metastable boron-oxygen complexes. The application of high resolution (Laplace) deep level transient spectroscopy in the structural identification of the induced defects is discussed with a view to controlling their formation by defect engineering.
Original languageEnglish
Pages (from-to)2274-2281
Number of pages8
JournalPhysica Status Solidi C: Conferences
Volume1
Issue number9
DOIs
Publication statusPublished - 30 Jul 2004

Keywords

  • 61.82.Fk
  • 71.55.Cn
  • 72.20.Jv
  • 84.60.Jt

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