Recombination at oxidation induced stacking faults in silicon

J. A. Davidson, J. H. Evans, M. Vandini, A. R. Peaker

Research output: Contribution to journalConference articlepeer-review

Abstract

We have characterised the recombination at Oxidation Induced Stacking Faults (OISF) by employing a combination of DLTS and Minority Carrier Transient Spectroscopy (MCTS). The recombination rate at traps associated with the OISF has been compared with recombination at a conventional point defect also present in the silicon. We find that the effect of small amounts of decoration by copper is to increase hole capture rates at electron filled traps. Infra Red Beam Induced Current measurements are consistent with this in that they also indicate that decoration causes enhanced recombination at the extended defects.

Original languageEnglish
Pages (from-to)995-1000
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume378
DOIs
Publication statusPublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, United States
Duration: 17 Apr 199521 Apr 1995

Fingerprint

Dive into the research topics of 'Recombination at oxidation induced stacking faults in silicon'. Together they form a unique fingerprint.

Cite this