Recombination in gallium phosphide via a deep state associated with nickel

A. R. Peaker; R. F. Brunwin; P. Jordan; B. Hamilton

doi:10.1049/el:19790471

Recombination in gallium phosphide via a deep state associated with nickel

A. R. Peaker, R. F. Brunwin, P. Jordan, B. Hamilton

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Abstract

The properties of nickel in gallium phosphide are discussed in terms of its behaviour as a recombination centre. Although it possesses a large minority-carrier cross-section and is present in v.p.e. material in quite large concentrations, it is found to have a very low majority-carrier cross-section so that the recombination rate saturates at low excitation densities. Thus the centre is unlikely to be of importance in the recombination process in normal l.e.d. structures.

Original language	English
Pages (from-to)	663-664
Number of pages	2
Journal	Electronics Letters
Volume	15
Issue number	20
DOIs	https://doi.org/10.1049/el:19790471
Publication status	Published - 27 Sept 1979

Keywords

Electron-hole recombination
Gallium phosphide

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10.1049/el:19790471

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abstract = "The properties of nickel in gallium phosphide are discussed in terms of its behaviour as a recombination centre. Although it possesses a large minority-carrier cross-section and is present in v.p.e. material in quite large concentrations, it is found to have a very low majority-carrier cross-section so that the recombination rate saturates at low excitation densities. Thus the centre is unlikely to be of importance in the recombination process in normal l.e.d. structures.",

keywords = "Electron-hole recombination, Gallium phosphide",

author = "Peaker, {A. R.} and Brunwin, {R. F.} and P. Jordan and B. Hamilton",

year = "1979",

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AU - Peaker, A. R.

AU - Brunwin, R. F.

AU - Jordan, P.

AU - Hamilton, B.

PY - 1979/9/27

Y1 - 1979/9/27

N2 - The properties of nickel in gallium phosphide are discussed in terms of its behaviour as a recombination centre. Although it possesses a large minority-carrier cross-section and is present in v.p.e. material in quite large concentrations, it is found to have a very low majority-carrier cross-section so that the recombination rate saturates at low excitation densities. Thus the centre is unlikely to be of importance in the recombination process in normal l.e.d. structures.

AB - The properties of nickel in gallium phosphide are discussed in terms of its behaviour as a recombination centre. Although it possesses a large minority-carrier cross-section and is present in v.p.e. material in quite large concentrations, it is found to have a very low majority-carrier cross-section so that the recombination rate saturates at low excitation densities. Thus the centre is unlikely to be of importance in the recombination process in normal l.e.d. structures.

KW - Electron-hole recombination

KW - Gallium phosphide

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U2 - 10.1049/el:19790471

DO - 10.1049/el:19790471

M3 - Article

AN - SCOPUS:0018520497

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JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

Recombination in gallium phosphide via a deep state associated with nickel

Abstract

Keywords

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