Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells

T. J. Badcock, R. Hao, M. A. Moram, M. J. Kappers, P. Dawson, R. A. Oliver, C. J. Humphreys

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    We report on the low temperature photoluminescence and photoluminescence excitation spectroscopy of non-polar InGaN/GaN multiple quantum well (QW) structures, grown on r-plane sapphire, containing average indium concentrations of 3, 4.5, and 6.5. In the sample with the lowest indium content, two distinct emission processes are identified which are attributed to recombination from planar areas of the QWs and regions of the QWs intersected by basal-plane stacking faults (BSFs). The marked reduction in the strength of the QW exciton observed in the excitation spectra when detecting BSF-related emission is attributed to the electronic disorder in the QW due to alloy potential fluctuations which inhibits exciton transfer from the planar regions of the QW. The magnitude of this disorder increases rapidly with increasing indium fraction as is evidenced by the progressive broadening of the emission and absorption features. © 2012 American Institute of Physics.
    Original languageEnglish
    Article number013534
    JournalJournal of Applied Physics
    Issue number1
    Publication statusPublished - 1 Jul 2012


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