@article{eb2117b8a7c84cdd995063bf15c7e3de,
title = "Recombination via point defects and their complexes in solar silicon",
abstract = "Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically",
keywords = "Laplace deep level transient spectroscopy, minority carrier lifetime, passivation, recombination, silicon solar cells, transition metals",
author = "Peaker, {A. R.} and Markevich, {V. P.} and B. Hamilton and G. Parada and A. Dudas and A. Pap and E. Don and B. Lim and J. Schmidt and L. Yu and Y. Yoon and G. Rozgonyi",
note = "We acknowledge funding for this work by the UK Engineering and Physical Sciences Research Council. Thanks are due to many of our colleagues for samples, advice and discussions. In particular: Bob Falster and Vladimir Voronkov (MEMC), Eike Weber (ISE), Bhushan Sopori (NREL), John Murphy (Oxford), Stefan Estreicher (Texas Tech), Alexandra Carvalho and Jose Coutinho (Aveiro)",
year = "2012",
month = oct,
doi = "10.1002/pssa.201200216",
language = "English",
volume = "209",
pages = "1884--1893",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "John Wiley & Sons Ltd",
number = "10",
}
