Regrowth behaviour of Si1-xGex/Si structures formed by Ge+ ion implantation and post amorphisation

J. P. Zhang, R. J. Wilson, P. L.F. Hemment, A. Claverie, F. Cristiano, P. Salles, J. Q. Wen, J. H. Evans, A. R. Peaker, G. J. Parker

Research output: Contribution to journalArticlepeer-review

Abstract

The synthesis of a buried layer of Si1-xGex alloy by combining high dose Ge+ implantation, amorphisation by high energy Si+ implantation and low temperature solid phase epitaxial regrowth is reported. A Si/Si1-xGex/Si heterostructure with graded interfaces and a maximum Ge concentration of 7.5 at.% has been successfully formed. The utility of amorphisation and low temperature solid phase growth across a graded phase boundary, as the last process step (EPIFAB) has been demonstrated. Examination of the sample by transmission electron microscopy has failed to resolve any crystallographic defects within the alloy layer, however, as expected, end-of-range defects are buried deep within the silicon substrate.

Original languageEnglish
Pages (from-to)222-228
Number of pages7
JournalNuclear Inst. and Methods in Physics Research, B
Volume84
Issue number2
DOIs
Publication statusPublished - 1 Feb 1994

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