Relation between photocurrent and DLTS signals observed for quantum dot systems

P. Kruszewski; L. Dobaczewski; A. Mesli; V. P. Markevich; C. Mitchell; M. Missous; A. R. Peaker

doi:10.1016/j.physb.2009.08.275

Relation between photocurrent and DLTS signals observed for quantum dot systems

P. Kruszewski, L. Dobaczewski, A. Mesli, V. P. Markevich, C. Mitchell, M. Missous, A. R. Peaker

Research output: Contribution to journal › Article › peer-review

Abstract

The electro-optical properties of InAs/GaAs quantum dots (QD) are presented. It is shown that they can contribute to the photocurrent at temperatures where photo-generated excitons can split. This happens if the carrier binding energies are not too large to prevent the carrier emission process. At lower temperatures, the exciton recombination process can effectively compete with the carrier emission processes and no photocurrent signal is observed. The Laplace DLTS technique has been used in a wide temperature range to analyze the electron and hole emission separately and combine them with the observed temperature dependence of the photocurrent. The photocurrent measurements also showed that with an increase in temperature the dot-related photocurrent peaks shift to lower energies with a rate similar to GaAs band gap shrinkage. © 2009 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	5170-5172
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	404
Issue number	23-24
DOIs	https://doi.org/10.1016/j.physb.2009.08.275
Publication status	Published - 15 Dec 2009

Keywords

binding energy - deep level transient spectroscopy - excitons - gallium arsenide - III-V semiconductors - indium compounds - photoconductivity - semiconductor quantum dots, photocurrent - DLTS signal - quantum dot system - photogenerated exciton - carrier binding energy - carrier emission process - Laplace DLTS technique - electron emission - hole emission - band gap shrinkage - InAs-GaAs

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10.1016/j.physb.2009.08.275

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@article{31767754956b496587701da81296da08,

title = "Relation between photocurrent and DLTS signals observed for quantum dot systems",

abstract = "The electro-optical properties of InAs/GaAs quantum dots (QD) are presented. It is shown that they can contribute to the photocurrent at temperatures where photo-generated excitons can split. This happens if the carrier binding energies are not too large to prevent the carrier emission process. At lower temperatures, the exciton recombination process can effectively compete with the carrier emission processes and no photocurrent signal is observed. The Laplace DLTS technique has been used in a wide temperature range to analyze the electron and hole emission separately and combine them with the observed temperature dependence of the photocurrent. The photocurrent measurements also showed that with an increase in temperature the dot-related photocurrent peaks shift to lower energies with a rate similar to GaAs band gap shrinkage. {\textcopyright} 2009 Elsevier B.V. All rights reserved.",

keywords = "binding energy - deep level transient spectroscopy - excitons - gallium arsenide - III-V semiconductors - indium compounds - photoconductivity - semiconductor quantum dots, photocurrent - DLTS signal - quantum dot system - photogenerated exciton - carrier binding energy - carrier emission process - Laplace DLTS technique - electron emission - hole emission - band gap shrinkage - InAs-GaAs",

author = "P. Kruszewski and L. Dobaczewski and A. Mesli and Markevich, {V. P.} and C. Mitchell and M. Missous and Peaker, {A. R.}",

year = "2009",

month = dec,

day = "15",

doi = "10.1016/j.physb.2009.08.275",

language = "English",

volume = "404",

pages = "5170--5172",

journal = "Physica B: Condensed Matter",

issn = "2469-9969",

publisher = "American Physical Society",

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TY - JOUR

T1 - Relation between photocurrent and DLTS signals observed for quantum dot systems

AU - Kruszewski, P.

AU - Dobaczewski, L.

AU - Mesli, A.

AU - Markevich, V. P.

AU - Mitchell, C.

AU - Missous, M.

AU - Peaker, A. R.

PY - 2009/12/15

Y1 - 2009/12/15

N2 - The electro-optical properties of InAs/GaAs quantum dots (QD) are presented. It is shown that they can contribute to the photocurrent at temperatures where photo-generated excitons can split. This happens if the carrier binding energies are not too large to prevent the carrier emission process. At lower temperatures, the exciton recombination process can effectively compete with the carrier emission processes and no photocurrent signal is observed. The Laplace DLTS technique has been used in a wide temperature range to analyze the electron and hole emission separately and combine them with the observed temperature dependence of the photocurrent. The photocurrent measurements also showed that with an increase in temperature the dot-related photocurrent peaks shift to lower energies with a rate similar to GaAs band gap shrinkage. © 2009 Elsevier B.V. All rights reserved.

AB - The electro-optical properties of InAs/GaAs quantum dots (QD) are presented. It is shown that they can contribute to the photocurrent at temperatures where photo-generated excitons can split. This happens if the carrier binding energies are not too large to prevent the carrier emission process. At lower temperatures, the exciton recombination process can effectively compete with the carrier emission processes and no photocurrent signal is observed. The Laplace DLTS technique has been used in a wide temperature range to analyze the electron and hole emission separately and combine them with the observed temperature dependence of the photocurrent. The photocurrent measurements also showed that with an increase in temperature the dot-related photocurrent peaks shift to lower energies with a rate similar to GaAs band gap shrinkage. © 2009 Elsevier B.V. All rights reserved.

KW - binding energy - deep level transient spectroscopy - excitons - gallium arsenide - III-V semiconductors - indium compounds - photoconductivity - semiconductor quantum dots, photocurrent - DLTS signal - quantum dot system - photogenerated exciton - carrier

U2 - 10.1016/j.physb.2009.08.275

DO - 10.1016/j.physb.2009.08.275

M3 - Article

SN - 2469-9969

VL - 404

SP - 5170

EP - 5172

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 23-24

ER -

Relation between photocurrent and DLTS signals observed for quantum dot systems

Abstract

Keywords

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