Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

E. Efthymiou; S. Bernardini; J. F. Zhang; S. N. Volkos; B. Hamilton; A. R. Peaker

doi:10.1016/j.tsf.2008.08.051

Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

E. Efthymiou, S. Bernardini, J. F. Zhang, S. N. Volkos, B. Hamilton, A. R. Peaker

Research output: Contribution to journal › Article › peer-review

Abstract

Current-voltage measurements indicated that RF hydrogen/deuterium remote plasma treatment of thin p-Si/SiO2/HfO2 structures proved to be detrimental in terms of dielectric reliability. By using capacitance-voltage measurements we demonstrate that this reported degradation was not attributed to plasma-induced defects but rather due to an enhanced liberation of hydrogen and deuterium species during the electrical stress. © 2008 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	207-208
Number of pages	1
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.051
Publication status	Published - 3 Nov 2008

Keywords

Deuterium
Dielectric breakdown
Hydrogen
RF remote plasma
SiO2/HfO2 gate stacks

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10.1016/j.tsf.2008.08.051

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title = "Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment",

abstract = "Current-voltage measurements indicated that RF hydrogen/deuterium remote plasma treatment of thin p-Si/SiO2/HfO2 structures proved to be detrimental in terms of dielectric reliability. By using capacitance-voltage measurements we demonstrate that this reported degradation was not attributed to plasma-induced defects but rather due to an enhanced liberation of hydrogen and deuterium species during the electrical stress. {\textcopyright} 2008 Elsevier B.V. All rights reserved.",

keywords = "Deuterium, Dielectric breakdown, Hydrogen, RF remote plasma, SiO2/HfO2 gate stacks",

author = "E. Efthymiou and S. Bernardini and Zhang, {J. F.} and Volkos, {S. N.} and B. Hamilton and Peaker, {A. R.}",

year = "2008",

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doi = "10.1016/j.tsf.2008.08.051",

language = "English",

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TY - JOUR

T1 - Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

AU - Efthymiou, E.

AU - Bernardini, S.

AU - Zhang, J. F.

AU - Volkos, S. N.

AU - Hamilton, B.

AU - Peaker, A. R.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - Current-voltage measurements indicated that RF hydrogen/deuterium remote plasma treatment of thin p-Si/SiO2/HfO2 structures proved to be detrimental in terms of dielectric reliability. By using capacitance-voltage measurements we demonstrate that this reported degradation was not attributed to plasma-induced defects but rather due to an enhanced liberation of hydrogen and deuterium species during the electrical stress. © 2008 Elsevier B.V. All rights reserved.

AB - Current-voltage measurements indicated that RF hydrogen/deuterium remote plasma treatment of thin p-Si/SiO2/HfO2 structures proved to be detrimental in terms of dielectric reliability. By using capacitance-voltage measurements we demonstrate that this reported degradation was not attributed to plasma-induced defects but rather due to an enhanced liberation of hydrogen and deuterium species during the electrical stress. © 2008 Elsevier B.V. All rights reserved.

KW - Deuterium

KW - Dielectric breakdown

KW - Hydrogen

KW - RF remote plasma

KW - SiO2/HfO2 gate stacks

U2 - 10.1016/j.tsf.2008.08.051

DO - 10.1016/j.tsf.2008.08.051

M3 - Article

VL - 517

SP - 207

EP - 208

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

Abstract

Keywords

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