Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks

E. Efthymiou; S. Bernardini; S. N. Volkos; B. Hamilton; J. F. Zhang; H. J. Uppal; A. R. Peaker

doi:10.1016/j.mee.2007.04.060

Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks

E. Efthymiou, S. Bernardini, S. N. Volkos, B. Hamilton, J. F. Zhang, H. J. Uppal, A. R. Peaker

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, a conductive atomic force microscope (CAFM) has been used in order to detect and electrically characterize the evolution of dielectric degradation on thin (

Original language	English
Pages (from-to)	2290-2293
Number of pages	3
Journal	Microelectronic Engineering
Volume	84
Issue number	9-10
DOIs	https://doi.org/10.1016/j.mee.2007.04.060
Publication status	Published - Sept 2007

Keywords

Conductive atomic force microscope
Dielectric breakdown
Ieakage sites
SiO2 oxide
SiO2/HfSixOy gate stack

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10.1016/j.mee.2007.04.060

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@article{70792aacafa4430faffc9e21d4c0208a,

title = "Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks",

abstract = "In this work, a conductive atomic force microscope (CAFM) has been used in order to detect and electrically characterize the evolution of dielectric degradation on thin (",

keywords = "Conductive atomic force microscope, Dielectric breakdown, Ieakage sites, SiO2 oxide, SiO2/HfSixOy gate stack",

author = "E. Efthymiou and S. Bernardini and Volkos, {S. N.} and B. Hamilton and Zhang, {J. F.} and Uppal, {H. J.} and Peaker, {A. R.}",

year = "2007",

month = sep,

doi = "10.1016/j.mee.2007.04.060",

language = "English",

volume = "84",

pages = "2290--2293",

journal = "Microelectronic Engineering",

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publisher = "Elsevier BV",

number = "9-10",

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T1 - Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks

AU - Efthymiou, E.

AU - Bernardini, S.

AU - Volkos, S. N.

AU - Hamilton, B.

AU - Zhang, J. F.

AU - Uppal, H. J.

AU - Peaker, A. R.

PY - 2007/9

Y1 - 2007/9

N2 - In this work, a conductive atomic force microscope (CAFM) has been used in order to detect and electrically characterize the evolution of dielectric degradation on thin (

AB - In this work, a conductive atomic force microscope (CAFM) has been used in order to detect and electrically characterize the evolution of dielectric degradation on thin (

KW - Conductive atomic force microscope

KW - Dielectric breakdown

KW - Ieakage sites

KW - SiO2 oxide

KW - SiO2/HfSixOy gate stack

U2 - 10.1016/j.mee.2007.04.060

DO - 10.1016/j.mee.2007.04.060

M3 - Article

SN - 0167-9317

VL - 84

SP - 2290

EP - 2293

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 9-10

ER -

Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks

Abstract

Keywords

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