Resonant electron spin-flip Raman scattering in Zn1-xMnxTe

M. P. Halsall; P. J. Boyce; D. Wolverson; J. J. Davies; D. E. Ashenford; B. Lunn

Resonant electron spin-flip Raman scattering in Zn1-xMnxTe

M. P. Halsall
, P. J. Boyce
, D. Wolverson
, J. J. Davies
, D. E. Ashenford
, B. Lunn

Research output: Contribution to journal › Article › peer-review

Abstract

We report the observation of spin-flip Raman scattering from photoexcited electrons in the dilute magnetic semiconductor Zn1-xMnxTe. In a 1μm epitaxial layer of Zn0.92Mn0.08Te grown by MBE on GaSb we observe a new Raman signal in the region near 120 cm-1 (∼ 15 meV). The signal is observed when the bandgap energy is tuned magnetically into resonance with the laser line (514 nm, 2.41 eV). The origin of the scattering is established unambiguously by the selection rules, the magnetic behaviour of the Raman shift and the quadratic dependence of the signal strength on excitation power. © 1992.

Original language	English
Pages (from-to)	85-88
Number of pages	3
Journal	Solid State Communications
Volume	83
Issue number	2
Publication status	Published - Jul 1992

Cite this

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title = "Resonant electron spin-flip Raman scattering in Zn1-xMnxTe",

abstract = "We report the observation of spin-flip Raman scattering from photoexcited electrons in the dilute magnetic semiconductor Zn1-xMnxTe. In a 1μm epitaxial layer of Zn0.92Mn0.08Te grown by MBE on GaSb we observe a new Raman signal in the region near 120 cm-1 (∼ 15 meV). The signal is observed when the bandgap energy is tuned magnetically into resonance with the laser line (514 nm, 2.41 eV). The origin of the scattering is established unambiguously by the selection rules, the magnetic behaviour of the Raman shift and the quadratic dependence of the signal strength on excitation power. {\textcopyright} 1992.",

author = "Halsall, \{M. P.\} and Boyce, \{P. J.\} and D. Wolverson and Davies, \{J. J.\} and Ashenford, \{D. E.\} and B. Lunn",

year = "1992",

month = jul,

language = "English",

volume = "83",

pages = "85--88",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier BV",

number = "2",

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TY - JOUR

T1 - Resonant electron spin-flip Raman scattering in Zn1-xMnxTe

AU - Halsall, M. P.

AU - Boyce, P. J.

AU - Wolverson, D.

AU - Davies, J. J.

AU - Ashenford, D. E.

AU - Lunn, B.

PY - 1992/7

Y1 - 1992/7

N2 - We report the observation of spin-flip Raman scattering from photoexcited electrons in the dilute magnetic semiconductor Zn1-xMnxTe. In a 1μm epitaxial layer of Zn0.92Mn0.08Te grown by MBE on GaSb we observe a new Raman signal in the region near 120 cm-1 (∼ 15 meV). The signal is observed when the bandgap energy is tuned magnetically into resonance with the laser line (514 nm, 2.41 eV). The origin of the scattering is established unambiguously by the selection rules, the magnetic behaviour of the Raman shift and the quadratic dependence of the signal strength on excitation power. © 1992.

AB - We report the observation of spin-flip Raman scattering from photoexcited electrons in the dilute magnetic semiconductor Zn1-xMnxTe. In a 1μm epitaxial layer of Zn0.92Mn0.08Te grown by MBE on GaSb we observe a new Raman signal in the region near 120 cm-1 (∼ 15 meV). The signal is observed when the bandgap energy is tuned magnetically into resonance with the laser line (514 nm, 2.41 eV). The origin of the scattering is established unambiguously by the selection rules, the magnetic behaviour of the Raman shift and the quadratic dependence of the signal strength on excitation power. © 1992.

M3 - Article

SN - 0038-1098

VL - 83

SP - 85

EP - 88

JO - Solid State Communications

JF - Solid State Communications

IS - 2

ER -

Resonant electron spin-flip Raman scattering in Zn1-xMnxTe

Abstract

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