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Resonant-Tunneling Quantum Dots and Wires - Some Recent Problems and Progress

  • P H Beton
  • , H Buhmann
  • , L Eaves
  • , T J Foster
  • , A K Geim
  • , N Lascala
  • , P C Main
  • , L Mansouri
  • , N Mori
  • , J W Sakai
  • , J Wang

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Electron tunnelling through donor-related states is discussed. This tunnelling process, which occurs well below the threshold voltage for conventional resonant tunnelling into the two-dimensional continuum states of the quantum well, reveals a new type of Fermi edge singularity effect which arises from the Coulomb interaction between the tunnelling electron on the localized site and the Fermi sea of electrons in the emitter layer. A new means of forming laterally confined resonant tunnelling devices is also described. By studying the effect of an applied magnetic field, the additional structure that appears in the current-voltage characteristics of these devices can be unambiguously associated with a lateral quantum mechanical confinement effect.
    Original languageEnglish
    Pages (from-to)1912-1918
    Number of pages7
    JournalSemiconductor Science and Technology
    Volume9
    Issue number11
    Publication statusPublished - 1994

    Keywords

    • states
    • well
    • heterostructures
    • systems
    • impurity

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