Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

Junseok Jeong, Ji Eun Choi, Yong Jin Kim, Sunyong Hwang, Sung Kyu Kim, Jong Kyu Kim, Hu Young Jeong, Young Joon Hong

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p-n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunneling probability determined by wire/film junction geometry and size.

    Original languageEnglish
    Article number101103
    JournalApplied Physics Letters
    Volume109
    Issue number10
    Early online date7 Sept 2016
    DOIs
    Publication statusPublished - 2016

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