RF characteristics uniformity of GaAs/AlAs tunnel diodes

Menglin Cao; James Sexton; Mohamed Missous; Michael J. Kelly

doi:10.1109/IRMMW-THz.2016.7758634

RF characteristics uniformity of GaAs/AlAs tunnel diodes

Menglin Cao, James Sexton, Mohamed Missous, Michael J. Kelly

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The uniformity of RF characteristics of GaAs/AlAs Asymmetric spacer layer tunnel diode (ASP AT) is presented for the first time in this report. The variations of S-parameter at zero bias across all devices at 5, 10, 15, and 20 GHz have been investigated, all of which are below 3%, making the ASPAT diodes further promising for manufacturing.

Original language	English
Title of host publication	41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
Publisher	IEEE Computer Society
Volume	2016-November
ISBN (Electronic)	9781467384858
DOIs	https://doi.org/10.1109/IRMMW-THz.2016.7758634
Publication status	Published - 28 Nov 2016
Event	41st International Conference on Infrared, Millimeter and Terahertz Waves - Copenhagen, Denmark Duration: 25 Sept 2016 → 30 Sept 2016

Conference

Conference	41st International Conference on Infrared, Millimeter and Terahertz Waves
Abbreviated title	IRMMW-THz 2016
Country/Territory	Denmark
City	Copenhagen
Period	25/09/16 → 30/09/16

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10.1109/IRMMW-THz.2016.7758634

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title = "RF characteristics uniformity of GaAs/AlAs tunnel diodes",

abstract = "The uniformity of RF characteristics of GaAs/AlAs Asymmetric spacer layer tunnel diode (ASP AT) is presented for the first time in this report. The variations of S-parameter at zero bias across all devices at 5, 10, 15, and 20 GHz have been investigated, all of which are below 3%, making the ASPAT diodes further promising for manufacturing.",

author = "Menglin Cao and James Sexton and Mohamed Missous and Kelly, {Michael J.}",

year = "2016",

month = nov,

day = "28",

doi = "10.1109/IRMMW-THz.2016.7758634",

language = "English",

volume = "2016-November",

booktitle = "41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016",

publisher = "IEEE Computer Society ",

address = "United States",

note = "41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 ; Conference date: 25-09-2016 Through 30-09-2016",

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Cao, M, Sexton, J, Missous, M & Kelly, MJ 2016, RF characteristics uniformity of GaAs/AlAs tunnel diodes. in 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016. vol. 2016-November, 7758634, IEEE Computer Society , 41st International Conference on Infrared, Millimeter and Terahertz Waves, Copenhagen, Denmark, 25/09/16. https://doi.org/10.1109/IRMMW-THz.2016.7758634

TY - GEN

T1 - RF characteristics uniformity of GaAs/AlAs tunnel diodes

AU - Cao, Menglin

AU - Sexton, James

AU - Missous, Mohamed

AU - Kelly, Michael J.

PY - 2016/11/28

Y1 - 2016/11/28

N2 - The uniformity of RF characteristics of GaAs/AlAs Asymmetric spacer layer tunnel diode (ASP AT) is presented for the first time in this report. The variations of S-parameter at zero bias across all devices at 5, 10, 15, and 20 GHz have been investigated, all of which are below 3%, making the ASPAT diodes further promising for manufacturing.

AB - The uniformity of RF characteristics of GaAs/AlAs Asymmetric spacer layer tunnel diode (ASP AT) is presented for the first time in this report. The variations of S-parameter at zero bias across all devices at 5, 10, 15, and 20 GHz have been investigated, all of which are below 3%, making the ASPAT diodes further promising for manufacturing.

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U2 - 10.1109/IRMMW-THz.2016.7758634

DO - 10.1109/IRMMW-THz.2016.7758634

M3 - Conference contribution

AN - SCOPUS:85006162859

VL - 2016-November

BT - 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016

PB - IEEE Computer Society

T2 - 41st International Conference on Infrared, Millimeter and Terahertz Waves

Y2 - 25 September 2016 through 30 September 2016

ER -

RF characteristics uniformity of GaAs/AlAs tunnel diodes

Abstract

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