RF performance of a novel all ternary InAlAs\InGaAs DHBT

All ternary In 0.52Al 0.48AsIn 0.53Ga 0.47AsIn 0.52Al 0.48As double-heterojunction bipolar transistors (DHBTs) have been grown using solid-source molecular-beam epitaxy. The development of these DHBTs required epitaxial design trade-offs which culminated in an optimum structure achieving high-breakdown (5.5 V), and RF performance demonstrating unity cutoff frequency (f t) and maximum oscillation frequency (f max) of 140 GHz and 95 GHz at relatively relaxed emitter dimensions of 1×5 νm 2. This is the highest reported cutoff frequency for an all ternary In 0.52Al 0.48AsIn 0.53Ga 0.47AsIn 0.52Al 0.48As DHBT. The demonstration of the frequency performance at relaxed emitter dimensions shows potential for this material type. © 2012 IOP Publishing Ltd.