Role of oxygen on the implantation related residual defects in silicon

Jianqing Wen; Jan Evans-Freeman; A. R. Peaker; J. P. Zhang; P. L.F. Hemment; C. D. Marsh; G. R. Booker

Role of oxygen on the implantation related residual defects in silicon

Jianqing Wen^*, Jan Evans-Freeman, A. R. Peaker, J. P. Zhang, P. L.F. Hemment, C. D. Marsh, G. R. Booker

^*Corresponding author for this work

UMIST

Research output: Contribution to conference › Paper › peer-review

Abstract

The role of oxygen concentration on the formation/evolution of residual defects in implanted and rapid thermal annealed silicon was studied in samples with various oxygen concentrations. Photoluminescence (PL) study showed a strong correlation between the D-line intensity and the oxygen concentration. Transmission electron microscopy (TEM) measurements also suggested the extended defects were more favored in the high oxygen sample. High frequency capacitance-voltage (C-V) measurements revealed excess acceptors that were further investigated by Deep level transient spectroscopy (DLTS). A hole trap with activation energy of 450 meV was detected and was suggested to relate to agglomerations of point defects associated with more than one type of 3D-metal related deep levels.

Original language	English
Pages	112-115
Number of pages	4
Publication status	Published - 2000

Cite this

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title = "Role of oxygen on the implantation related residual defects in silicon",

abstract = "The role of oxygen concentration on the formation/evolution of residual defects in implanted and rapid thermal annealed silicon was studied in samples with various oxygen concentrations. Photoluminescence (PL) study showed a strong correlation between the D-line intensity and the oxygen concentration. Transmission electron microscopy (TEM) measurements also suggested the extended defects were more favored in the high oxygen sample. High frequency capacitance-voltage (C-V) measurements revealed excess acceptors that were further investigated by Deep level transient spectroscopy (DLTS). A hole trap with activation energy of 450 meV was detected and was suggested to relate to agglomerations of point defects associated with more than one type of 3D-metal related deep levels.",

author = "Jianqing Wen and Jan Evans-Freeman and Peaker, {A. R.} and Zhang, {J. P.} and Hemment, {P. L.F.} and Marsh, {C. D.} and Booker, {G. R.}",

year = "2000",

language = "English",

pages = "112--115",

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TY - CONF

T1 - Role of oxygen on the implantation related residual defects in silicon

AU - Wen, Jianqing

AU - Evans-Freeman, Jan

AU - Peaker, A. R.

AU - Zhang, J. P.

AU - Hemment, P. L.F.

AU - Marsh, C. D.

AU - Booker, G. R.

PY - 2000

Y1 - 2000

N2 - The role of oxygen concentration on the formation/evolution of residual defects in implanted and rapid thermal annealed silicon was studied in samples with various oxygen concentrations. Photoluminescence (PL) study showed a strong correlation between the D-line intensity and the oxygen concentration. Transmission electron microscopy (TEM) measurements also suggested the extended defects were more favored in the high oxygen sample. High frequency capacitance-voltage (C-V) measurements revealed excess acceptors that were further investigated by Deep level transient spectroscopy (DLTS). A hole trap with activation energy of 450 meV was detected and was suggested to relate to agglomerations of point defects associated with more than one type of 3D-metal related deep levels.

AB - The role of oxygen concentration on the formation/evolution of residual defects in implanted and rapid thermal annealed silicon was studied in samples with various oxygen concentrations. Photoluminescence (PL) study showed a strong correlation between the D-line intensity and the oxygen concentration. Transmission electron microscopy (TEM) measurements also suggested the extended defects were more favored in the high oxygen sample. High frequency capacitance-voltage (C-V) measurements revealed excess acceptors that were further investigated by Deep level transient spectroscopy (DLTS). A hole trap with activation energy of 450 meV was detected and was suggested to relate to agglomerations of point defects associated with more than one type of 3D-metal related deep levels.

UR - http://www.scopus.com/inward/record.url?scp=0034475966&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034475966

SP - 112

EP - 115

ER -

Role of oxygen on the implantation related residual defects in silicon

Abstract

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