Room temperature THz detection and emission with semiconductor nanodevices

J. Mateos; J.F. Millithaler; I. Iniguez-de-la-Torre; A. Iniguez-de-la-Torre; B.G. Vasallo; S. Perez; T. Gonzalez; Y. Alimi; L. Zhang; A. Rezazadeh; A.M. Song; P. Sangare; G. Ducournau; C. Gaquiére; A. Westlund; J. Grahn

doi:10.1109/CDE.2013.6481381

Room temperature THz detection and emission with semiconductor nanodevices

J. Mateos, J.F. Millithaler, I. Iniguez-de-la-Torre, A. Iniguez-de-la-Torre, B.G. Vasallo, S. Perez, T. Gonzalez, Y. Alimi, L. Zhang, A. Rezazadeh, A.M. Song, P. Sangare, G. Ducournau, C. Gaquiére, A. Westlund, J. Grahn

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

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Abstract

In this paper we present the advances on thefabrication of THz emitters and detectors obtained within theframework of the European ROOTHz project. Two types ofdevices are explored, self-switching diodes and slot-diodes, usingboth narrow bandgap and wide bandgap semiconductors. Thisbroad approach allows us to improve the frequency and powergenerated by Gunn diodes and the responsivity and noise ofdetectors at THz frequencies.

Original language	English
Title of host publication	host publication
Place of Publication	Spain
Pages	215-218
Number of pages	4
DOIs	https://doi.org/10.1109/CDE.2013.6481381
Publication status	Published - Feb 2013
Event	Electron Devices (CDE) - Valladolid, Spain Duration: 12 Feb 2014 → 14 Feb 2014 http://IEEE Xplore

Conference

Conference	Electron Devices (CDE)
City	Valladolid, Spain
Period	12/02/14 → 14/02/14
Internet address	http://IEEE Xplore

Keywords

Gunn oscillations
Monte Carlo simulation
nanodevices
THz devices

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10.1109/CDE.2013.6481381

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Mateos, J., Millithaler, J. F., Iniguez-de-la-Torre, I., Iniguez-de-la-Torre, A., Vasallo, B. G., Perez, S., Gonzalez, T., Alimi, Y., Zhang, L., Rezazadeh, A., Song, A. M., Sangare, P., Ducournau, G., Gaquiére, C., Westlund, A., & Grahn, J. (2013). Room temperature THz detection and emission with semiconductor nanodevices. In host publication (pp. 215-218). https://doi.org/10.1109/CDE.2013.6481381

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title = "Room temperature THz detection and emission with semiconductor nanodevices",

abstract = "In this paper we present the advances on thefabrication of THz emitters and detectors obtained within theframework of the European ROOTHz project. Two types ofdevices are explored, self-switching diodes and slot-diodes, usingboth narrow bandgap and wide bandgap semiconductors. Thisbroad approach allows us to improve the frequency and powergenerated by Gunn diodes and the responsivity and noise ofdetectors at THz frequencies.",

keywords = "Gunn oscillations, Monte Carlo simulation, nanodevices, THz devices",

author = "J. Mateos and J.F. Millithaler and I. Iniguez-de-la-Torre and A. Iniguez-de-la-Torre and B.G. Vasallo and S. Perez and T. Gonzalez and Y. Alimi and L. Zhang and A. Rezazadeh and A.M. Song and P. Sangare and G. Ducournau and C. Gaqui{\'e}re and A. Westlund and J. Grahn",

note = "This work has been partially supported by European Commission throughthe ROOTHz Project ICT-2009-243845, the Direcci{\'o}n General deInvestigaci{\'o}n (MICINN) through Project TEC2010-15413 and by theConsejer{\'i}a de Educaci{\'o}n, Junta de Castilla y Le{\'o}n through ProjectSA183A12-1.; Electron Devices (CDE) ; Conference date: 12-02-2014 Through 14-02-2014",

year = "2013",

month = feb,

doi = "10.1109/CDE.2013.6481381",

language = "English",

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Mateos, J, Millithaler, JF, Iniguez-de-la-Torre, I, Iniguez-de-la-Torre, A, Vasallo, BG, Perez, S, Gonzalez, T, Alimi, Y, Zhang, L, Rezazadeh, A, Song, AM, Sangare, P, Ducournau, G, Gaquiére, C, Westlund, A & Grahn, J 2013, Room temperature THz detection and emission with semiconductor nanodevices. in host publication. Spain, pp. 215-218, Electron Devices (CDE), Valladolid, Spain, 12/02/14. https://doi.org/10.1109/CDE.2013.6481381

TY - GEN

T1 - Room temperature THz detection and emission with semiconductor nanodevices

AU - Mateos, J.

AU - Millithaler, J.F.

AU - Iniguez-de-la-Torre, I.

AU - Iniguez-de-la-Torre, A.

AU - Vasallo, B.G.

AU - Perez, S.

AU - Gonzalez, T.

AU - Alimi, Y.

AU - Zhang, L.

AU - Rezazadeh, A.

AU - Song, A.M.

AU - Sangare, P.

AU - Ducournau, G.

AU - Gaquiére, C.

AU - Westlund, A.

AU - Grahn, J.

N1 - This work has been partially supported by European Commission throughthe ROOTHz Project ICT-2009-243845, the Dirección General deInvestigación (MICINN) through Project TEC2010-15413 and by theConsejería de Educación, Junta de Castilla y León through ProjectSA183A12-1.

PY - 2013/2

Y1 - 2013/2

N2 - In this paper we present the advances on thefabrication of THz emitters and detectors obtained within theframework of the European ROOTHz project. Two types ofdevices are explored, self-switching diodes and slot-diodes, usingboth narrow bandgap and wide bandgap semiconductors. Thisbroad approach allows us to improve the frequency and powergenerated by Gunn diodes and the responsivity and noise ofdetectors at THz frequencies.

AB - In this paper we present the advances on thefabrication of THz emitters and detectors obtained within theframework of the European ROOTHz project. Two types ofdevices are explored, self-switching diodes and slot-diodes, usingboth narrow bandgap and wide bandgap semiconductors. Thisbroad approach allows us to improve the frequency and powergenerated by Gunn diodes and the responsivity and noise ofdetectors at THz frequencies.

KW - Gunn oscillations

KW - Monte Carlo simulation

KW - nanodevices

KW - THz devices

U2 - 10.1109/CDE.2013.6481381

DO - 10.1109/CDE.2013.6481381

M3 - Conference contribution

SN - 9781467346689

SP - 215

EP - 218

BT - host publication

CY - Spain

T2 - Electron Devices (CDE)

Y2 - 12 February 2014 through 14 February 2014

ER -

Room temperature THz detection and emission with semiconductor nanodevices

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Keywords

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