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Schottky Barrier Engineering in Carbon Nanotube with Various Metal Electrodes

  • David Perello
  • , Moon J. Kim
  • , DongKyu Cha
  • , Gang Hee Han
  • , Dong Jae Bae
  • , Seung Yol Jeong
  • , Young Hee Lee
  • , Minhee Yun

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

We investigated carbon nanotube field effect transistors (CNT FET) utilizing semiconducting single-walled carbon nanotubes (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on long (~11 micron) SWCNT. Large contact resistances around four MΩ were observed at room temperature. Low termperature measurements yielded varying contact resistances for these same devices. Transport properties of the devices follow to the Schottky contact and Poole-Frenkel model with measured 25-41 meV barriers for the devices.
Original languageEnglish
Title of host publication2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3
Pages189-+
Publication statusPublished - 2007

Keywords

  • Carbon Nanotubes
  • Nanufacturing
  • Nano architecture

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