Abstract
We investigated carbon nanotube field effect transistors (CNT FET) utilizing semiconducting single-walled carbon nanotubes (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on long (~11 micron) SWCNT. Large contact resistances around four MΩ were observed at room temperature. Low termperature measurements yielded varying contact resistances for these same devices. Transport properties of the devices follow to the Schottky contact and Poole-Frenkel model with measured 25-41 meV barriers for the devices.
| Original language | English |
|---|---|
| Title of host publication | 2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3 |
| Pages | 189-+ |
| Publication status | Published - 2007 |
Keywords
- Carbon Nanotubes
- Nanufacturing
- Nano architecture
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