Schottky Barriers on P-Type Gallium Arsenide Prepared by Molecular Beam Epitaxy

M. Missous; E. H. Rhoderick; K. E. Singer

doi:10.1049/el:19860165

Schottky Barriers on P-Type Gallium Arsenide Prepared by Molecular Beam Epitaxy

M. Missous, E. H. Rhoderick, K. E. Singer

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Abstract

Rectifying contacts have been made by depositing epitaxial films of aluminium and antimony on p-type gallium arsenide by molecular beam epitaxy. The I/V and C/V characteristics were almost ideal. The barrier heights determined from the I/V characteristics were 0.64 eV for aluminium and 0.66 eV for antimony. The significance of these results is briefly discussed.

Original language	English
Pages (from-to)	241-242
Number of pages	2
Journal	Electronics Letters
Volume	22
Issue number	5
DOIs	https://doi.org/10.1049/el:19860165
Publication status	Published - 1 Jan 1986

Keywords

Epitaxy
Semiconductor devices and materials

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10.1049/el:19860165

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title = "Schottky Barriers on P-Type Gallium Arsenide Prepared by Molecular Beam Epitaxy",

abstract = "Rectifying contacts have been made by depositing epitaxial films of aluminium and antimony on p-type gallium arsenide by molecular beam epitaxy. The I/V and C/V characteristics were almost ideal. The barrier heights determined from the I/V characteristics were 0.64 eV for aluminium and 0.66 eV for antimony. The significance of these results is briefly discussed.",

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year = "1986",

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doi = "10.1049/el:19860165",

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AU - Missous, M.

AU - Rhoderick, E. H.

AU - Singer, K. E.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - Rectifying contacts have been made by depositing epitaxial films of aluminium and antimony on p-type gallium arsenide by molecular beam epitaxy. The I/V and C/V characteristics were almost ideal. The barrier heights determined from the I/V characteristics were 0.64 eV for aluminium and 0.66 eV for antimony. The significance of these results is briefly discussed.

AB - Rectifying contacts have been made by depositing epitaxial films of aluminium and antimony on p-type gallium arsenide by molecular beam epitaxy. The I/V and C/V characteristics were almost ideal. The barrier heights determined from the I/V characteristics were 0.64 eV for aluminium and 0.66 eV for antimony. The significance of these results is briefly discussed.

KW - Epitaxy

KW - Semiconductor devices and materials

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DO - 10.1049/el:19860165

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Schottky Barriers on P-Type Gallium Arsenide Prepared by Molecular Beam Epitaxy

Abstract

Keywords

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