Semiconductor material development for terahertz applications

    Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


    Analysis of the performance characteristics of low-temperature-grown GaAs (LT-GaAs) and detailed characterisation of undoped and Be-doped LT-In0.53Ga0.47As-In0 52Al0.48 As structures is undertaken in order to correlate the structural point defect behaviour with obtained electrical, optical and THz properties. By a judicious combination of doping and annealing temperatures, materials with sub-picosecond lifetimes and resistivity of ~1×107 ohm/square have been obtained on LT-In0.53Ga0.47As-In0.52Al0.48As with THz performances that include sub-picosecond recombination times and over 50dB THz power spectrum dynamic range. The LT-In0.53Ga0.47As-In0.52Al0.48As system shows promise for next generation efficient and portable all-fibre THz imaging systems.

    Original languageEnglish
    Title of host publicationHandbook of Terahertz Technology for Imaging, Sensing and Communications
    EditorsDaryoosh Saeedkia
    PublisherElsevier BV
    Number of pages26
    ISBN (Electronic)9780857096494
    ISBN (Print)9780857092359
    Publication statusPublished - 16 Jan 2013


    • Epitaxy
    • LT-GaAs
    • LT-InGaAs-InAlAs
    • Photoconductive switches
    • Photomixers
    • THz


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