Semiconductor material development for terahertz applications

M. Missous

doi:10.1533/9780857096494.2.464

Semiconductor material development for terahertz applications

M. Missous^*

^*Corresponding author for this work

Research output: Chapter in Book/Conference proceeding › Chapter › peer-review

Abstract

Analysis of the performance characteristics of low-temperature-grown GaAs (LT-GaAs) and detailed characterisation of undoped and Be-doped LT-In_0.53Ga_0.47As-In_{0 52}Al₀.₄₈ As structures is undertaken in order to correlate the structural point defect behaviour with obtained electrical, optical and THz properties. By a judicious combination of doping and annealing temperatures, materials with sub-picosecond lifetimes and resistivity of ~1×10⁷ ohm/square have been obtained on LT-In_0.53Ga_0.47As-In_0.52Al_0.48As with THz performances that include sub-picosecond recombination times and over 50dB THz power spectrum dynamic range. The LT-In_0.53Ga_0.47As-In_0.52Al_0.48As system shows promise for next generation efficient and portable all-fibre THz imaging systems.

Original language	English
Title of host publication	Handbook of Terahertz Technology for Imaging, Sensing and Communications
Editors	Daryoosh Saeedkia
Publisher	Elsevier BV
Chapter	16
Pages	464-489
Number of pages	26
ISBN (Electronic)	9780857096494
ISBN (Print)	9780857092359
DOIs	https://doi.org/10.1533/9780857096494.2.464
Publication status	Published - 16 Jan 2013

Keywords

Epitaxy
LT-GaAs
LT-InGaAs-InAlAs
Photoconductive switches
Photomixers
THz

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10.1533/9780857096494.2.464

Cite this

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title = "Semiconductor material development for terahertz applications",

abstract = "Analysis of the performance characteristics of low-temperature-grown GaAs (LT-GaAs) and detailed characterisation of undoped and Be-doped LT-In0.53Ga0.47As-In0 52Al0.48 As structures is undertaken in order to correlate the structural point defect behaviour with obtained electrical, optical and THz properties. By a judicious combination of doping and annealing temperatures, materials with sub-picosecond lifetimes and resistivity of ~1×107 ohm/square have been obtained on LT-In0.53Ga0.47As-In0.52Al0.48As with THz performances that include sub-picosecond recombination times and over 50dB THz power spectrum dynamic range. The LT-In0.53Ga0.47As-In0.52Al0.48As system shows promise for next generation efficient and portable all-fibre THz imaging systems.",

keywords = "Epitaxy, LT-GaAs, LT-InGaAs-InAlAs, Photoconductive switches, Photomixers, THz",

author = "M. Missous",

year = "2013",

month = jan,

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doi = "10.1533/9780857096494.2.464",

language = "English",

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address = "Netherlands",

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T1 - Semiconductor material development for terahertz applications

AU - Missous, M.

PY - 2013/1/16

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N2 - Analysis of the performance characteristics of low-temperature-grown GaAs (LT-GaAs) and detailed characterisation of undoped and Be-doped LT-In0.53Ga0.47As-In0 52Al0.48 As structures is undertaken in order to correlate the structural point defect behaviour with obtained electrical, optical and THz properties. By a judicious combination of doping and annealing temperatures, materials with sub-picosecond lifetimes and resistivity of ~1×107 ohm/square have been obtained on LT-In0.53Ga0.47As-In0.52Al0.48As with THz performances that include sub-picosecond recombination times and over 50dB THz power spectrum dynamic range. The LT-In0.53Ga0.47As-In0.52Al0.48As system shows promise for next generation efficient and portable all-fibre THz imaging systems.

AB - Analysis of the performance characteristics of low-temperature-grown GaAs (LT-GaAs) and detailed characterisation of undoped and Be-doped LT-In0.53Ga0.47As-In0 52Al0.48 As structures is undertaken in order to correlate the structural point defect behaviour with obtained electrical, optical and THz properties. By a judicious combination of doping and annealing temperatures, materials with sub-picosecond lifetimes and resistivity of ~1×107 ohm/square have been obtained on LT-In0.53Ga0.47As-In0.52Al0.48As with THz performances that include sub-picosecond recombination times and over 50dB THz power spectrum dynamic range. The LT-In0.53Ga0.47As-In0.52Al0.48As system shows promise for next generation efficient and portable all-fibre THz imaging systems.

KW - Epitaxy

KW - LT-GaAs

KW - LT-InGaAs-InAlAs

KW - Photoconductive switches

KW - Photomixers

KW - THz

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SN - 9780857092359

SP - 464

EP - 489

BT - Handbook of Terahertz Technology for Imaging, Sensing and Communications

A2 - Saeedkia, Daryoosh

PB - Elsevier BV

ER -

Semiconductor material development for terahertz applications

Abstract

Keywords

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