Semiconductor material development for terahertz applications

    Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

    Abstract

    Analysis of the performance characteristics of low-temperature-grown GaAs (LT-GaAs) and detailed characterisation of undoped and Be-doped LT-In0.53Ga0.47As-In0 52Al0.48 As structures is undertaken in order to correlate the structural point defect behaviour with obtained electrical, optical and THz properties. By a judicious combination of doping and annealing temperatures, materials with sub-picosecond lifetimes and resistivity of ~1×107 ohm/square have been obtained on LT-In0.53Ga0.47As-In0.52Al0.48As with THz performances that include sub-picosecond recombination times and over 50dB THz power spectrum dynamic range. The LT-In0.53Ga0.47As-In0.52Al0.48As system shows promise for next generation efficient and portable all-fibre THz imaging systems.

    Original languageEnglish
    Title of host publicationHandbook of Terahertz Technology for Imaging, Sensing and Communications
    EditorsDaryoosh Saeedkia
    PublisherElsevier BV
    Chapter16
    Pages464-489
    Number of pages26
    ISBN (Electronic)9780857096494
    ISBN (Print)9780857092359
    DOIs
    Publication statusPublished - 16 Jan 2013

    Keywords

    • Epitaxy
    • LT-GaAs
    • LT-InGaAs-InAlAs
    • Photoconductive switches
    • Photomixers
    • THz

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