Sharp 1.54μm luminescence from porous erbium implanted silicon

T. Taskin; S. Gardelis; J. H. Evans; B. Hamilton; A. R. Peaker

doi:10.1049/el:19951439

Sharp 1.54μm luminescence from porous erbium implanted silicon

T. Taskin, S. Gardelis, J. H. Evans, B. Hamilton, A. R. Peaker

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Abstract

Sharp luminescence at 1.54μm from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon.

Original language	English
Pages (from-to)	2132-2133
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	24
DOIs	https://doi.org/10.1049/el:19951439
Publication status	Published - 23 Nov 1995

Keywords

Luminescence
Porous silicon

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10.1049/el:19951439

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title = "Sharp 1.54μm luminescence from porous erbium implanted silicon",

abstract = "Sharp luminescence at 1.54μm from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon.",

keywords = "Luminescence, Porous silicon",

author = "T. Taskin and S. Gardelis and Evans, {J. H.} and B. Hamilton and Peaker, {A. R.}",

year = "1995",

month = nov,

day = "23",

doi = "10.1049/el:19951439",

language = "English",

volume = "31",

pages = "2132--2133",

journal = " Electronics Letters",

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publisher = "Institution of Engineering and Technology ",

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TY - JOUR

T1 - Sharp 1.54μm luminescence from porous erbium implanted silicon

AU - Taskin, T.

AU - Gardelis, S.

AU - Evans, J. H.

AU - Hamilton, B.

AU - Peaker, A. R.

PY - 1995/11/23

Y1 - 1995/11/23

N2 - Sharp luminescence at 1.54μm from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon.

AB - Sharp luminescence at 1.54μm from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon.

KW - Luminescence

KW - Porous silicon

UR - http://www.scopus.com/inward/record.url?scp=0029409384&partnerID=8YFLogxK

U2 - 10.1049/el:19951439

DO - 10.1049/el:19951439

M3 - Article

AN - SCOPUS:0029409384

SN - 0013-5194

VL - 31

SP - 2132

EP - 2133

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

Sharp 1.54μm luminescence from porous erbium implanted silicon

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Keywords

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