Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber

Elias Z. Stutz, Mahdi Zamani, Djamshid Damry, Lea Buswell, Rajrupa Paul, Simon Escobar Steinvall, Jean-Baptiste Leran, Jessica Boland, Mirjana Dimitrievska, Anna Fontcuberta i Morral

Research output: Contribution to journalArticlepeer-review

Abstract

Zinc phosphide, Zn3P2, is a semiconductor with a high absorption coefficient in the spectral range relevant for single junction photovoltaic applications. It is made of elements abundant in the Earth's crust, opening up a pathway for large deployment of solar cell alternatives to the silicon market. Here we provide a thorough study of the optical properties of single crystalline Zn3P2 thin films grown on (100) InP by molecular beam epitaxy. The films are slightly phosphorus-rich as determined by Rutherford backscattering. We elucidate two main radiative recombination pathways: one transition at approximately 1.52 eV attributed to zone-center band-to-band electronic transitions; and a lower-energy transition observed at 1.3 eV to 1.4 eV attributed to a defect band or band tail related recombination mechanisms. We believe phosphorus interstitials are likely at the origin of this band.

Original languageEnglish
Pages (from-to)1295-1303
Number of pages9
JournalMaterials Advances
Volume3
Issue number2
Early online date17 Dec 2021
DOIs
Publication statusPublished - 24 Jan 2022

Research Beacons, Institutes and Platforms

  • Photon Science Institute

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