Projects per year
Abstract
Zinc phosphide, Zn3P2, is a semiconductor with a high absorption coefficient in the spectral range relevant for single junction photovoltaic applications. It is made of elements abundant in the Earth's crust, opening up a pathway for large deployment of solar cell alternatives to the silicon market. Here we provide a thorough study of the optical properties of single crystalline Zn3P2 thin films grown on (100) InP by molecular beam epitaxy. The films are slightly phosphorus-rich as determined by Rutherford backscattering. We elucidate two main radiative recombination pathways: one transition at approximately 1.52 eV attributed to zone-center band-to-band electronic transitions; and a lower-energy transition observed at 1.3 eV to 1.4 eV attributed to a defect band or band tail related recombination mechanisms. We believe phosphorus interstitials are likely at the origin of this band.
Original language | English |
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Pages (from-to) | 1295-1303 |
Number of pages | 9 |
Journal | Materials Advances |
Volume | 3 |
Issue number | 2 |
Early online date | 17 Dec 2021 |
DOIs | |
Publication status | Published - 24 Jan 2022 |
Research Beacons, Institutes and Platforms
- Photon Science Institute
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Terahertz, Topology, Technology: Realising the potential of nanoscale Dirac materials using near-field terahertz spectroscopy
Boland, J. (PI)
1/07/20 → 31/07/25
Project: Research
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Terahertz lights up the nanoscale: Exposing the ultrafast dynamics of Dirac systems via near-field terahertz spectroscopy
Boland, J. (PI)
1/09/19 → 28/02/22
Project: Research