SiGeC HBTs: impact of C on device performance

I. Z. Mitrovic; Huda Abdel Wahab El Mubarek; O. Buiu; Steve Hall; Peter Ashburn; J. Zhang

doi:10.1007/978-1-4020-6380-0_13

SiGeC HBTs: impact of C on device performance

I. Z. Mitrovic
, Huda Abdel Wahab El Mubarek
, O. Buiu
, Steve Hall
, Peter Ashburn
, J. Zhang

Research output: Contribution to journal › Article › peer-review

Abstract

Our UK consortium has recently reported advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of the consortium work, focused on fabricating SiGeC HBTs and on the impact of C (up to 1.6?) on device performance. The devices with low C content (0.45?) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1?. © 2007 Springer.

Original language	English
Pages (from-to)	171-178
Number of pages	7
Journal	NATO Security through Science Series C: Environmental Security
DOIs	https://doi.org/10.1007/978-1-4020-6380-0_13
Publication status	Published - 2007

Keywords

Bandgap
Carbon
Gummel plots
Leakage currents
SiGeC HBTs

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10.1007/978-1-4020-6380-0_13

Cite this

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title = "SiGeC HBTs: impact of C on device performance",

abstract = "Our UK consortium has recently reported advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of the consortium work, focused on fabricating SiGeC HBTs and on the impact of C (up to 1.6?) on device performance. The devices with low C content (0.45?) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1?. {\textcopyright} 2007 Springer.",

keywords = "Bandgap, Carbon, Gummel plots, Leakage currents, SiGeC HBTs",

author = "Mitrovic, \{I. Z.\} and \{El Mubarek\}, \{Huda Abdel Wahab\} and O. Buiu and Steve Hall and Peter Ashburn and J. Zhang",

note = "Times Cited: 1 Hall, S Nazarov, AN Lysenko, VS NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices OCT 15-19, 2006 Big Yalta, UKRAINE",

year = "2007",

doi = "10.1007/978-1-4020-6380-0\_13",

language = "English",

pages = "171--178",

journal = "NATO Security through Science Series C: Environmental Security",

issn = "1871-4668",

publisher = "Springer Nature",

}

TY - JOUR

T1 - SiGeC HBTs: impact of C on device performance

AU - Mitrovic, I. Z.

AU - El Mubarek, Huda Abdel Wahab

AU - Buiu, O.

AU - Hall, Steve

AU - Ashburn, Peter

AU - Zhang, J.

N1 - Times Cited: 1 Hall, S Nazarov, AN Lysenko, VS NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices OCT 15-19, 2006 Big Yalta, UKRAINE

PY - 2007

Y1 - 2007

N2 - Our UK consortium has recently reported advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of the consortium work, focused on fabricating SiGeC HBTs and on the impact of C (up to 1.6?) on device performance. The devices with low C content (0.45?) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1?. © 2007 Springer.

AB - Our UK consortium has recently reported advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of the consortium work, focused on fabricating SiGeC HBTs and on the impact of C (up to 1.6?) on device performance. The devices with low C content (0.45?) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1?. © 2007 Springer.

KW - Bandgap

KW - Carbon

KW - Gummel plots

KW - Leakage currents

KW - SiGeC HBTs

U2 - 10.1007/978-1-4020-6380-0_13

DO - 10.1007/978-1-4020-6380-0_13

M3 - Article

SN - 1871-4668

SP - 171

EP - 178

JO - NATO Security through Science Series C: Environmental Security

JF - NATO Security through Science Series C: Environmental Security

ER -

SiGeC HBTs: impact of C on device performance

Abstract

Keywords

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