Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm

R. J. Curry; William P. Gillin; A. P. Knights; R. Gwilliam

Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm

R. J. Curry^*, William P. Gillin, A. P. Knights, R. Gwilliam

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

1.5-μm light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing organic light-emitting diode (OLED) structure which utilizes p⁺⁺ silicon as the hole injection contact. The OLEDs use N, N′-diphenyl-N,N′-bis(3-methyl)-1,1′-biphenyl-4,4′- diamine as the hole transporting layer and erbium tris(8-hydroxyquinoline) as the electron conducting and emitting layer.

Original language	English
Pages (from-to)	2271-2273
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	15
Publication status	Published - 9 Oct 2000

Cite this

@article{e0c2ce1a65b3494eb1cc529e98ac0dd3,

title = "Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm",

abstract = "1.5-μm light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing organic light-emitting diode (OLED) structure which utilizes p++ silicon as the hole injection contact. The OLEDs use N, N′-diphenyl-N,N′-bis(3-methyl)-1,1′-biphenyl-4,4′- diamine as the hole transporting layer and erbium tris(8-hydroxyquinoline) as the electron conducting and emitting layer.",

author = "Curry, {R. J.} and Gillin, {William P.} and Knights, {A. P.} and R. Gwilliam",

year = "2000",

month = oct,

day = "9",

language = "English",

volume = "77",

pages = "2271--2273",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm

AU - Curry, R. J.

AU - Gillin, William P.

AU - Knights, A. P.

AU - Gwilliam, R.

PY - 2000/10/9

Y1 - 2000/10/9

N2 - 1.5-μm light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing organic light-emitting diode (OLED) structure which utilizes p++ silicon as the hole injection contact. The OLEDs use N, N′-diphenyl-N,N′-bis(3-methyl)-1,1′-biphenyl-4,4′- diamine as the hole transporting layer and erbium tris(8-hydroxyquinoline) as the electron conducting and emitting layer.

AB - 1.5-μm light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing organic light-emitting diode (OLED) structure which utilizes p++ silicon as the hole injection contact. The OLEDs use N, N′-diphenyl-N,N′-bis(3-methyl)-1,1′-biphenyl-4,4′- diamine as the hole transporting layer and erbium tris(8-hydroxyquinoline) as the electron conducting and emitting layer.

UR - http://www.scopus.com/inward/record.url?scp=0001088513&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0001088513

SN - 0003-6951

VL - 77

SP - 2271

EP - 2273

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm

Abstract

Other files and links

Fingerprint

Cite this