TY - JOUR
T1 - Silicon defect characterization by high resolution laplace deep level transient spectroscopy
AU - Peaker, A. R.
AU - Dobaczewski, L.
AU - Andersen, O.
AU - Rubaldo, L.
AU - Hawkins, I. D.
AU - Bonde Nielsen, K.
AU - Evans-Freeman, J. H.
PY - 2000
Y1 - 2000
N2 - The high resolution Laplace deep level transient spectroscopy (LDLTS) was used to study the defects of silicon materials and devices. This technique was used to detect the defects in hydrogenated transition metals, implant damage, effects of the local environment on impurities in SiGe and the use of uniaxial stress with LDLTS to determine defect symmetry. With this technology, by carefully designed experimental system and the transient averaging, transients can be separated with more than an order of magnitude better resolution than DLTS.
AB - The high resolution Laplace deep level transient spectroscopy (LDLTS) was used to study the defects of silicon materials and devices. This technique was used to detect the defects in hydrogenated transition metals, implant damage, effects of the local environment on impurities in SiGe and the use of uniaxial stress with LDLTS to determine defect symmetry. With this technology, by carefully designed experimental system and the transient averaging, transients can be separated with more than an order of magnitude better resolution than DLTS.
UR - http://www.scopus.com/inward/record.url?scp=0034448533&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0034448533
SN - 0277-786X
VL - 4218
SP - 549
EP - 560
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - High Purity Silicon VI
Y2 - 22 October 2000 through 27 October 2000
ER -