Simulation and modeling of self-switching devices

M. Åberg, J. Saijets, A. Song, M. Prunnila

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new type of nanometer scale nonlinear device, called self-switching device (SSD) is realized by tailoring the boundary of a narrow semiconductor channel to break its symmetry. An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a strongly nonlinear I-V characteristic, resembling that of a conventional diode. Because the structure resembles a diode-connected FET (gate and drain shorted), we have modeled the device as a sideways turned FET, so that the trench width t corresponds to insulator thickness tox and conducting layer thickness Z (inside the semiconductor!) corresponds to channel width W.
Original languageUndefined
Title of host publicationPhysica Scripta T
Pages123-126
Number of pages4
VolumeT114
DOIs
Publication statusPublished - 2004

Keywords

  • Computer simulation
  • Field effect transistors
  • Switching circuits

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