Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix

Maja Buljan, Sara R C Pinto, Reza J. Kashtiban, Anabela G. Rolo, Adil Chahboun, Ursel Bangert, Sergey Levichev, Václav Hol, Maria J M Gomes

    Research output: Contribution to journalArticlepeer-review

    Abstract

    In this paper, we present a study of structural properties of SiGe quantum dots formed in amorphous silica matrix by magnetron sputtering technique. We investigate deposition conditions leading to the formation of dense and uniformly sized quantum dots, distributed homogeneously in the matrix. X-ray and Raman spectroscopy were used to estimate the Si content. A detailed analysis based on grazing incidence small angle x-ray scattering revealed the influence of the deposition conditions on quantum dot sizes, size distributions, spatial arrangement, and concentration of quantum dots in the matrix, as well as the Si:Ge content. © 2009 American Institute of Physics.
    Original languageEnglish
    Article number084319
    JournalJournal of Applied Physics
    Volume106
    Issue number8
    DOIs
    Publication statusPublished - 2009

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