Small-signal modeling of pHEMTs and analysis of their microwave performance

Z. Hamaizia; N. Sengouga; M. Missous; M. C.E. Yagoub

doi:10.3923/jeasci.2010.252.256

Small-signal modeling of pHEMTs and analysis of their microwave performance

Z. Hamaizia^*, N. Sengouga, M. Missous, M. C.E. Yagoub

^*Corresponding author for this work

University Of Ottawa

Research output: Contribution to journal › Article › peer-review

Abstract

Accurate extraction of the small-signal equivalent circuit of GaAs microwave Field Effect Transistors (GaAs FET) is crucial for efficient design of microwave analog circuits such as Low Noise Amplifiers (LNAs). This study proposed an improved direct analytical extraction procedure. Its efficiency was demonstrated through the characterisation of two 1μm gate-length pseudomorphic heterojonction transistors.

Original language	English
Pages (from-to)	252-256
Number of pages	5
Journal	Journal of Engineering and Applied Sciences
Volume	5
Issue number	4
DOIs	https://doi.org/10.3923/jeasci.2010.252.256
Publication status	Published - 1 Dec 2010

Keywords

Canada
Extraction
GaAs FET
LANs
pHEMT
Small signal modeling

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10.3923/jeasci.2010.252.256

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abstract = "Accurate extraction of the small-signal equivalent circuit of GaAs microwave Field Effect Transistors (GaAs FET) is crucial for efficient design of microwave analog circuits such as Low Noise Amplifiers (LNAs). This study proposed an improved direct analytical extraction procedure. Its efficiency was demonstrated through the characterisation of two 1μm gate-length pseudomorphic heterojonction transistors.",

keywords = "Canada, Extraction, GaAs FET, LANs, pHEMT, Small signal modeling",

author = "Z. Hamaizia and N. Sengouga and M. Missous and Yagoub, \{M. C.E.\}",

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AU - Sengouga, N.

AU - Missous, M.

AU - Yagoub, M. C.E.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Accurate extraction of the small-signal equivalent circuit of GaAs microwave Field Effect Transistors (GaAs FET) is crucial for efficient design of microwave analog circuits such as Low Noise Amplifiers (LNAs). This study proposed an improved direct analytical extraction procedure. Its efficiency was demonstrated through the characterisation of two 1μm gate-length pseudomorphic heterojonction transistors.

AB - Accurate extraction of the small-signal equivalent circuit of GaAs microwave Field Effect Transistors (GaAs FET) is crucial for efficient design of microwave analog circuits such as Low Noise Amplifiers (LNAs). This study proposed an improved direct analytical extraction procedure. Its efficiency was demonstrated through the characterisation of two 1μm gate-length pseudomorphic heterojonction transistors.

KW - Canada

KW - Extraction

KW - GaAs FET

KW - LANs

KW - pHEMT

KW - Small signal modeling

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U2 - 10.3923/jeasci.2010.252.256

DO - 10.3923/jeasci.2010.252.256

M3 - Article

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EP - 256

JO - Journal of Engineering and Applied Sciences

JF - Journal of Engineering and Applied Sciences

IS - 4

ER -

Small-signal modeling of pHEMTs and analysis of their microwave performance

Abstract

Keywords

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