Solid solutions of M2-2xIn2xS3 (M = Bi or Sb) by Solventless Thermolysis

Tahani Alqahtani, Robert J. Cernik, Paul O'brien, David J Lewis

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Abstract

Tris(O-ethylxanthato) bismuth(III) [Bi(S2COEt)3], tris(O-ethylxanthato) antimony(III) [Sb(S2COEt)3] and tris(O-ethylxanthato) indium(III) [In(S2COEt)3], have been synthesized and employed for the preparation of Bi-In-S and Sb-In-S systems by solventless thermolysis. M2-2xIn2xS3 (where M = Bi or Sb) alloys were obtained using a mixture of In(S2COEt)3 and M(S2COEt)3 molecular precursors, with different mole fraction of indium x (0 ≤ x ≤ 1) at 300 °C. The structural, compositional, optical and morphological properties of the synthesized M2-2xIn2xS3 samples have been characterized using a range of techniques including powder X-ray diffraction (p-XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) spectroscopy, Raman spectroscopy and UV–Vis absorption spectroscopy. PXRD data suggests the incorporation of molar ratio of indium up to x ≤ 0.4 into the M2S3 does not alter the orthorhombic crystal structure of M2S3. Higher quantities of indium (x ≥ 0.6) changes the crystal structure to cubic M2S3. The estimated elemental compositions from EDX data are in line with the stoichiometric ratio expected. SEM images revealed that the morphology of M2-2xIn2xS3 (0 ≤ x ≤ 1) samples varied significantly with the changes in indium mole fraction in the precursor mixture. Elemental mapping of the mixed samples M2-2xIn2xS3 (0 ≤ x ≤ 1) revealed uniform elemental distributions of M, In and S in every sample investigated. The estimated band gap of Bi2-2xIn2xS3 films varied from 1.66 to 2.39 eV, while the band gap of Sb2-2xIn2xS3 films varied in the range 2.19 – 2.9 eV, and the energy can be tuned by variation of the indium content.
Original languageEnglish
JournalJournal of Materials Chemistry C
Early online date26 Mar 2019
DOIs
Publication statusPublished - 2019

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