Solution-processed, low voltage tantalum-based memristive switches

Marios Sophocleous; Navid Mohammadian; Leszek A. Majewski; Julius Georgiou

doi:10.1016/j.matlet.2020.127676

Solution-processed, low voltage tantalum-based memristive switches

Marios Sophocleous, Navid Mohammadian, Leszek A. Majewski, Julius Georgiou

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Abstract

In this letter, preliminary results showing the memristive behavior of tantalum/tantalum oxide/platinum devices on glass substrates are reported. The ultra-thin (d < 10 nm) tantalum oxide films were obtained using solution-based anodic oxidation (anodization) of Ta in citric acid. The devices were tested using standard ReRAM characterization tests from ±0.5 V to ±5 V and showed a promising memristive behavior. The memristive switches show an almost 80-times change in resistance between the ON and OFF states.

Original language	English
Pages (from-to)	127676
Journal	Materials Letters
Volume	269
Early online date	19 Mar 2020
DOIs	https://doi.org/10.1016/j.matlet.2020.127676
Publication status	Published - 15 Jun 2020

Keywords

Memristors
Memristive switches
Anodization
Tantalum
Tantalum-oxide

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10.1016/j.matlet.2020.127676

Solution-processed, low voltage tantalum-based memristive switches - AcceptedAccepted author manuscript, 714 KBLicence: CC BY-NC-ND

https://linkinghub.elsevier.com/retrieve/pii/S0167577X20303815

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title = "Solution-processed, low voltage tantalum-based memristive switches",

abstract = "In this letter, preliminary results showing the memristive behavior of tantalum/tantalum oxide/platinum devices on glass substrates are reported. The ultra-thin (d < 10 nm) tantalum oxide films were obtained using solution-based anodic oxidation (anodization) of Ta in citric acid. The devices were tested using standard ReRAM characterization tests from ±0.5 V to ±5 V and showed a promising memristive behavior. The memristive switches show an almost 80-times change in resistance between the ON and OFF states.",

keywords = "Memristors, Memristive switches, Anodization, Tantalum, Tantalum-oxide",

author = "Marios Sophocleous and Navid Mohammadian and Majewski, {Leszek A.} and Julius Georgiou",

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T1 - Solution-processed, low voltage tantalum-based memristive switches

AU - Sophocleous, Marios

AU - Mohammadian, Navid

AU - Majewski, Leszek A.

AU - Georgiou, Julius

PY - 2020/6/15

Y1 - 2020/6/15

N2 - In this letter, preliminary results showing the memristive behavior of tantalum/tantalum oxide/platinum devices on glass substrates are reported. The ultra-thin (d < 10 nm) tantalum oxide films were obtained using solution-based anodic oxidation (anodization) of Ta in citric acid. The devices were tested using standard ReRAM characterization tests from ±0.5 V to ±5 V and showed a promising memristive behavior. The memristive switches show an almost 80-times change in resistance between the ON and OFF states.

AB - In this letter, preliminary results showing the memristive behavior of tantalum/tantalum oxide/platinum devices on glass substrates are reported. The ultra-thin (d < 10 nm) tantalum oxide films were obtained using solution-based anodic oxidation (anodization) of Ta in citric acid. The devices were tested using standard ReRAM characterization tests from ±0.5 V to ±5 V and showed a promising memristive behavior. The memristive switches show an almost 80-times change in resistance between the ON and OFF states.

KW - Memristors

KW - Memristive switches

KW - Anodization

KW - Tantalum

KW - Tantalum-oxide

U2 - 10.1016/j.matlet.2020.127676

DO - 10.1016/j.matlet.2020.127676

M3 - Article

SN - 0167-577X

VL - 269

SP - 127676

JO - Materials Letters

JF - Materials Letters

ER -

Solution-processed, low voltage tantalum-based memristive switches

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Keywords

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