Spatial variability in large area single and few-layer CVD graphene

Clara F. Moldovan, Krzysztof Gajewski, Michele Tamagnone, Robert S. Weatherup, Hisashi Sugime, Anna Szumska, Wolfgang A. Vitale, John Robertson, Adrian M. Ionescu

    Research output: Other contributionpeer-review

    Abstract

    Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SiO2 and Al2O3 were fabricated and analyzed.
    Original languageEnglish
    Publication statusPublished - 2015

    Keywords

    • graphene
    • variability
    • CVD
    • substrate
    • KPFM
    • FTIR
    • multilayer
    • bilayer
    • Fermi level
    • large-scale devices

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