Abstract
An accurate spectral response model for phototransistors has been proposed. Themodel is based on the calculation of photogenerated carriers through absorption in base, collector and sub-collector regions of phototransistor. Absorption pattern in AlGaAs/GaAs heterojunction phototransistors has been analysed and discussed using theproposed model. Collection efficiency, being strictly a geometry and wavelength dependent parameter, is not considered unity unlike all the precedents and its importance is highlighted. With the aid of the absorption model, absolute responsivity of a phototransistor is predicted for the first time. Power absorption profile and quantumefficiency have also been modelled. The analysis is performed for short wavelength transmission and the measurements corroborate the simulated results.
Original language | English |
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Title of host publication | 2008 European Microwave Integrated Circuit Conference, EuMIC 2008|Eur. Microw. Integr. Circuit Conf., EuMIC |
Place of Publication | IEEE Explore |
Publisher | European Microwave Association |
Pages | 346-349 |
Number of pages | 3 |
ISBN (Print) | 9782874870071 |
DOIs | |
Publication status | Published - 2008 |
Event | 2008 European Microwave Integrated Circuit Conference, EuMIC 2008 - Amsterdam Duration: 1 Jul 2008 → … |
Conference
Conference | 2008 European Microwave Integrated Circuit Conference, EuMIC 2008 |
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City | Amsterdam |
Period | 1/07/08 → … |
Keywords
- Optical Spectral response, Phototransistors, AlGaAs/GaAs heterojunction, short wavelength transmission